In order to reveal the influence of annealing temperature on the photoelectric characteristic of PbSe quantum dots doped glass produced by a melt-annealing technique, experiments are carried out to compare the influence of different nucleation time and crystallization temperature. The transmission electron microscope images show that a certain amount of PbSe crystals are crystallized in the glass. While the degrees of crystallization, particle size and density have some slightly difference. A procedure combined the Mie scatter theory and the Kramers-Krnig relation is used to calculate the real and imaginary parts of the dielectric function from the experimental absorption spectrum. The calculation results indicate that the annealing temperature has obvious influence on the absorption coefficient and the refractive index. So the suitable annealing temperature and duration are the important factors in the preparation process of quantum dots doped glass with excellent photoelectric properties.