Researching | The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators

Journals >Journal of Semiconductors >Volume 44 >Issue 5 >Page 050202 > Article

Journal of Semiconductors
Vol. 44, Issue 5, 050202 (2023)

The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators

Haikun Jia^*

Author Affiliations

Institute of Mircoelectronics, Tsinghua University, 100084, China

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DOI: 10.1088/1674-4926/44/5/050202 Cite this Article

Haikun Jia. The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators[J]. Journal of Semiconductors, 2023, 44(5): 050202 Copy Citation Text

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References

[1] Q Wu, W Deng, H Jia et al. An 11.5-to-14.3GHz 192.8dBc/Hz FoM at 1MHz offset dual-core enhanced class-F VCO with common-mode-noise self-cancellation and isolation technique. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 146(2023).

[2] X Zhan, J Yin, P Mak et al. A 22.4-to-26.8GHz dual-path-synchronized quad-core oscillator achieving −138dBc/Hz PN and 193.3dBc/Hz FoM at 10MHz offset from 25.8GHz. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 148(2023).

[3] Y Shu, Z Deng, X Luo. A 28GHz scalable inter-core-shaping multi-core oscillator with DM/CM-configured coupling achieving 193.3dBc/Hz FoM and 205.5dBc/Hz FoMA at 1MHz offset. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 150(2023).

[4] H K Jia, W Deng, P D Guan et al. A 60GHz 186.5dBc/Hz FoM quad-core fundamental VCO using circular triple-coupled transformer with No mode ambiguity in 65nm CMOS. 2021 IEEE International Solid-State Circuits Conference (ISSCC), 297(2021).

[5] H Guo, Y Chen, Y Huang et al. An 83.3-to-104.7GHz harmonic-extraction VCO incorporating multi-resonance, multi-core, and multi-mode (3M) techniques achieving –124dBc/Hz absolute PN and 190.7dBc/Hz FoMT. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 152(2023).

[6] Y Y Shu, H J Qian, X Luo. A 18.6-to-40.1GHz 201.7dBc/Hz FoMT multi-core oscillator using E-M mixed-coupling resonance boosting. 2020 IEEE International Solid-State Circuits Conference (ISSCC), 272(2020).

[7] J Gong, B Patra, L Enthoven et al. A 0.049mm2 7.1-to-16.8GHz dual-core triple-mode VCO achieving 200dB FoMA in 22nm FinFET. 2022 IEEE International Solid-State Circuits Conference (ISSCC), 152(2022).

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Haikun Jia. The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators[J]. Journal of Semiconductors, 2023, 44(5): 050202

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