Researching | JAD Volume 12 Issue 6,2022

Influence of the aspect ratio of nitrogen-doped carbon nanotubes on their piezoelectric properties

Marina V. Il’ina, Olga I. Soboleva, Nikolay N. Rudyk, Maria R. Polyvianova, Soslan A. Khubezhov, and Oleg I. Il’in

Recent studies have shown that nitrogen doping of carbon nanotubes (CNTs) can lead to the formation of piezoelectric properties in them, not characteristic of pure CNTs. In this work, nitrogen-doped CNTs were grown by plasma-enhanced chemical vapor deposition and the effect of the aspect ratio of the nanotube length to

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 6, 2241001 (2022)

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Domain structure and dielectric diffusion-relaxation characteristics of ternary Pb(

{In}_{1 / 2}

{Nb}_{1 / 2}

)O₃–Pb(

{Mg}_{1 / 3}

{Nb}_{2 / 3}

)O₃–PbTiO₃ ceramics

Xudong Qi, Kai Li, Lang Bian, Enwei Sun, Limei Zheng, and Rui Zhang

Relaxor-based ternary Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) single crystals and ceramics are promising candidates for high-performance electromechanical conversion devices. It is known that the domain structure and dielectric diffusion–relaxation characteristics are crucial to the excellent performances Relaxor-based ternary Pb(

{In}_{1 / 2}

{Nb}_{1 / 2}

)O₃–Pb(

{Mg}_{1 / 3}

{Nb}_{2 / 3}

)O₃–PbTiO₃ (PIN–PMN–PT) single crystals and ceramics are promising candidates for high-performance electromechanical conversion devices. It is known that the domain structure and dielectric diffusion–relaxation characteristics are crucial to the excellent performances of relaxor ferroelectrics. In this work, we prepared the PIN–PMN–PT ceramics with various PIN/PMN proportions and systematically investigated their domain structure and dielectric diffusion–relaxation properties. The effect of PIN/PMN proportion on the domain size and dielectric diffusion–relaxation characteristics was also studied. The investigations showed that PIN–PMN–PT ceramics presented multi-type domain patterns comprising irregular island domains and regular lamellar domains. Moreover, the dependent relations of PIN/PMN proportions on the dielectric diffusion and domain size indicated that the PIN composition has a stronger lattice distortion than PMN composition; increasing the PIN proportion can enhance the dielectric diffusion and decrease the domain size. Our results could deepen the understanding of structure–property relationships of multicomponent relaxor ferroelectrics and guide the design and exploration of new high-performance ferroelectric materials.Relaxor-based ternary Pb(

{In}_{1 / 2}

{Nb}_{1 / 2}

)O₃–Pb(

{Mg}_{1 / 3}

{Nb}_{2 / 3}

)O₃–PbTiO₃ (PIN–PMN–PT) single crystals and ceramics are promising candidates for high-performance electromechanical conversion devices. It is known that the domain structure and dielectric diffusion–relaxation characteristics are crucial to the excellent performances of relaxor ferroelectrics. In this work, we prepared the PIN–PMN–PT ceramics with various PIN/PMN proportions and systematically investigated their domain structure and dielectric diffusion–relaxation properties. The effect of PIN/PMN proportion on the domain size and dielectric diffusion–relaxation characteristics was also studied. The investigations showed that PIN–PMN–PT ceramics presented multi-type domain patterns comprising irregular island domains and regular lamellar domains. Moreover, the dependent relations of PIN/PMN proportions on the dielectric diffusion and domain size indicated that the PIN composition has a stronger lattice distortion than PMN composition; increasing the PIN proportion can enhance the dielectric diffusion and decrease the domain size. Our results could deepen the understanding of structure–property relationships of multicomponent relaxor ferroelectrics and guide the design and exploration of new high-performance ferroelectric materials..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 6, 2241002 (2022)

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Effect of Li₂CO₃ addition on structural and electrical properties of 0.7 BiFeO₃–0.3BaTiO₃ piezoelectric ceramic

Hongbo Liu, and Jianguo Chen

In this work, Li2CO3 was added into 0.7BiFeO3?0.3BaZr0.02Ti0.98O3?0.01molMnO2 (70BFBTMn) piezoelectric ceramics to reduce their sintering temperatures. 70BFBTMn ceramics were sintered by a conventional solid reaction method, and their structural, dielectric, piezoelectric and ferroelectric properties were studied. Thes

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 6, 2241003 (2022)

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Influence of the prestressed layer on spherical transducer in sound radiation performance

Xiaofang Zhang, Xiujuan Lin, Rui Guo, Changhong Yang, Hui Zhao, Mingyu Zhang, Yan Wang, Xin Cheng, and Shifeng Huang

To improve the acoustic radiation performance of the spherical transducer, a prestressed layer is formed in the transducer through fiber winding. The influence of the prestressed layer on the transducer is studied from the effects of the radial prestress (Tr) and acoustic impedance, respectively. First, a theoretical e To improve the acoustic radiation performance of the spherical transducer, a prestressed layer is formed in the transducer through fiber winding. The influence of the prestressed layer on the transducer is studied from the effects of the radial prestress (

T

_{r}

) and acoustic impedance, respectively. First, a theoretical estimation of

T

_{r}

is established with a thin shell approximation of the prestressed layer. Then, the acoustic impedance is measured to evaluate the efficiency of sound energy transmission within the prestressed layer. Further, the ideal effects of

T

_{r}

on the sound radiation performances of the transducer are analyzed through finite element analysis (FEA). Finally, four spherical transducers are fabricated and tested to investigate their dependence of actual properties on the prestressed layer. The results show that with the growth of

T

_{r}

, the acoustic impedance of the prestressed layer grows, mitigating the enormous impedance mismatch between the piezoelectric ceramic and water, while increasing attenuation of the acoustic energy, resulting in a peak value of the maximum transmitting voltage response (

{TVR}_{max}

) at 1.18 MPa. The maximum drive voltage increases with

T

_{r}

, leading to a steady growth of the maximum transmitting sound level (

{SL}_{max}

), with a noticeable ascend of 3.9 dB at a 3.44 MPa

T

_{r}

. This is a strong credibility that the prestressed layer could improve the sound radiation performance of the spherical transducer.To improve the acoustic radiation performance of the spherical transducer, a prestressed layer is formed in the transducer through fiber winding. The influence of the prestressed layer on the transducer is studied from the effects of the radial prestress (

T

_{r}

) and acoustic impedance, respectively. First, a theoretical estimation of

T

_{r}

is established with a thin shell approximation of the prestressed layer. Then, the acoustic impedance is measured to evaluate the efficiency of sound energy transmission within the prestressed layer. Further, the ideal effects of

T

_{r}

on the sound radiation performances of the transducer are analyzed through finite element analysis (FEA). Finally, four spherical transducers are fabricated and tested to investigate their dependence of actual properties on the prestressed layer. The results show that with the growth of

T

_{r}

, the acoustic impedance of the prestressed layer grows, mitigating the enormous impedance mismatch between the piezoelectric ceramic and water, while increasing attenuation of the acoustic energy, resulting in a peak value of the maximum transmitting voltage response (

{TVR}_{max}

) at 1.18 MPa. The maximum drive voltage increases with

T

_{r}

, leading to a steady growth of the maximum transmitting sound level (

{SL}_{max}

), with a noticeable ascend of 3.9 dB at a 3.44 MPa

T

_{r}

. This is a strong credibility that the prestressed layer could improve the sound radiation performance of the spherical transducer..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 6, 2241004 (2022)

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Stable self-polarization in lead-free Bi(

{Fe}_{0.93}

{Mn}_{0.05}

{Ti}_{0.02}

)O₃ thick films

Mengjia Fan, Xinyu Bu, Wenxuan Wang, Wei Sun, Xiujuan Lin, Shifeng Huang, and Changhong Yang

The BiFeO3-based film is one of the most promising candidates for lead-free piezoelectric film devices. In this work, the 1 μm-thick Bi(Fe0.93Mn0.05Ti0.02)O3 (BFMT) films are grown on the ITO/glass substrate using a sol-gel method combined with spin-coating and layer-by-layer annealing technique. These films display a The BiFeO₃-based film is one of the most promising candidates for lead-free piezoelectric film devices. In this work, the 1

μ

m-thick Bi(

{Fe}_{0.93}

{Mn}_{0.05}

{Ti}_{0.02}

)O₃ (BFMT) films are grown on the ITO/glass substrate using a sol-gel method combined with spin-coating and layer-by-layer annealing technique. These films display a large saturated polarization of 95

μ

C/cm², and a remanent polarization of 70

μ

C/cm². Especially, the films are self-poled caused by an internal bias field, giving rise to asymmetric polarization-electric field (

P ? E

) loops with a positive shift along the

x

-axis. A stable self-polarization state is maintained during the applied electric field increasing to 1500 kV/cm and then decreasing back. The weak dependence of

P ? E

loops on frequency (1–50 kHz) and temperature (25–125

^{°}

C) indicate that the internal bias field can be stable within a certain frequency and temperature range. These results demonstrate that the self-polarized BFMT thick films can be integrated into devices without any poling process, with promising applications in micro-electro-mechanical systems.The BiFeO₃-based film is one of the most promising candidates for lead-free piezoelectric film devices. In this work, the 1

μ

m-thick Bi(

{Fe}_{0.93}

{Mn}_{0.05}

{Ti}_{0.02}

)O₃ (BFMT) films are grown on the ITO/glass substrate using a sol-gel method combined with spin-coating and layer-by-layer annealing technique. These films display a large saturated polarization of 95

μ

C/cm², and a remanent polarization of 70

μ

C/cm². Especially, the films are self-poled caused by an internal bias field, giving rise to asymmetric polarization-electric field (

P ? E

) loops with a positive shift along the

x

-axis. A stable self-polarization state is maintained during the applied electric field increasing to 1500 kV/cm and then decreasing back. The weak dependence of

P ? E

loops on frequency (1–50 kHz) and temperature (25–125

^{°}

C) indicate that the internal bias field can be stable within a certain frequency and temperature range. These results demonstrate that the self-polarized BFMT thick films can be integrated into devices without any poling process, with promising applications in micro-electro-mechanical systems..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 6, 2241005 (2022)

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Achieving both large piezoelectric constant and low dielectric loss in BiScO₃-PbTiO₃–Bi(

{Mn}_{2 / 3}

{Sb}_{1 / 3}

)O₃ high-temperature piezoelectric ceramics

Yunyun Feng, Changhong Yang, Xiaoying Guo, Wei Sun, Wenxuan Wang, Xiujuan Lin, and Shifeng Huang

BiScO3–PbTiO3 binary ceramics own both high Curie temperature and prominent piezoelectric properties, while the high dielectric loss needs to be reduced substantially for practical application especially at high temperatures. In this work, a ternary perovskite system of (1–x–y)BiScO3–yPbTiO3–xBi(Mn2/3Sb1/3)O3 (BS–yPT–x BiScO₃–PbTiO₃ binary ceramics own both high Curie temperature and prominent piezoelectric properties, while the high dielectric loss needs to be reduced substantially for practical application especially at high temperatures. In this work, a ternary perovskite system of (1–

x

–

y

)BiScO₃–

y

PbTiO₃–

x

Bi(

{Mn}_{2 / 3}

{Sb}_{1 / 3}

)O₃ (BS–

y

PT–

x

BMS) with

x

= 0.005,

y

= 0.630–0.645 and

x

= 0.015,

y

= 0.625–0.640 was prepared by the traditional solid-state reaction method. The phase structure, microstructure, dielectric/piezoelectric/ferroelectric properties were studied. Among BS–

y

PT–

x

BMS ceramic series, the BS–0.630PT–0.015BMS at morphotropic phase boundary possesses the reduced dielectric loss factor (tan

δ

= 1.20%) and increased mechanical quality factor (

Q

_{m}

= 84), and maintains a high Curie temperature (

T_{C}

= 410

^{°}

C) and excellent piezoelectric properties (

d

_{33}

= 330 pC/N) simultaneously. Of particular importance, at elevated temperature of 200

^{°}

C, the value of tan

δ

is only increased to 1.59%. All these properties indicate that the BS–0.630PT–0.015BMS ceramic has great potential for application in high-temperature piezoelectric devices.BiScO₃–PbTiO₃ binary ceramics own both high Curie temperature and prominent piezoelectric properties, while the high dielectric loss needs to be reduced substantially for practical application especially at high temperatures. In this work, a ternary perovskite system of (1–

x

–

y

)BiScO₃–

y

PbTiO₃–

x

Bi(

{Mn}_{2 / 3}

{Sb}_{1 / 3}

)O₃ (BS–

y

PT–

x

BMS) with

x

= 0.005,

y

= 0.630–0.645 and

x

= 0.015,

y

= 0.625–0.640 was prepared by the traditional solid-state reaction method. The phase structure, microstructure, dielectric/piezoelectric/ferroelectric properties were studied. Among BS–

y

PT–

x

BMS ceramic series, the BS–0.630PT–0.015BMS at morphotropic phase boundary possesses the reduced dielectric loss factor (tan

δ

= 1.20%) and increased mechanical quality factor (

Q

_{m}

= 84), and maintains a high Curie temperature (

T_{C}

= 410

^{°}

C) and excellent piezoelectric properties (

d

_{33}

= 330 pC/N) simultaneously. Of particular importance, at elevated temperature of 200

^{°}

C, the value of tan

δ

is only increased to 1.59%. All these properties indicate that the BS–0.630PT–0.015BMS ceramic has great potential for application in high-temperature piezoelectric devices..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 6, 2250017 (2022)

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Large effective piezoelectric response from the spontaneously polarized surface layer in P(VDF-TrFE) arch films

Xinping Hu, Yuhong Zhu, and Baojin Chu

In this work, we show that a d33～150 pC/N can be obtained in nonpoled poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) copolymer films with an arch structure. The copolymer films, which are often thought to be homogeneous, are in fact inhomogeneous in microstructure and physical properties after film fabricati In this work, we show that a

d_{33} ～

150 pC/N can be obtained in nonpoled poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) copolymer films with an arch structure. The copolymer films, which are often thought to be homogeneous, are in fact inhomogeneous in microstructure and physical properties after film fabrication. Although a large proportion of the copolymer film is nonpolar, as expected in a nonpoled ferroelectric film, the surface regions of the film are spontaneously polarized. We propose that inhomogeneous stress in the surface regions, which is either from the constraint of the substrate or skin layer effect formed during the film fabrication, generates a flexoelectric response and orients the spontaneous polarization of the ferroelectric film. As a result of the polar surface regions, the nonpoled films exhibit a piezoelectric response. The piezoelectric response is further amplified by the special arch structure of the films, leading to the observed large effective piezoelectric response. This study not only discovers the polar surface effect in ferroelectric polymer films, but also proposes an approach to design polymer materials with a strong piezoelectric response.In this work, we show that a

d_{33} ～

150 pC/N can be obtained in nonpoled poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) copolymer films with an arch structure. The copolymer films, which are often thought to be homogeneous, are in fact inhomogeneous in microstructure and physical properties after film fabrication. Although a large proportion of the copolymer film is nonpolar, as expected in a nonpoled ferroelectric film, the surface regions of the film are spontaneously polarized. We propose that inhomogeneous stress in the surface regions, which is either from the constraint of the substrate or skin layer effect formed during the film fabrication, generates a flexoelectric response and orients the spontaneous polarization of the ferroelectric film. As a result of the polar surface regions, the nonpoled films exhibit a piezoelectric response. The piezoelectric response is further amplified by the special arch structure of the films, leading to the observed large effective piezoelectric response. This study not only discovers the polar surface effect in ferroelectric polymer films, but also proposes an approach to design polymer materials with a strong piezoelectric response..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 6, 2250020 (2022)

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