Researching | JAD Volume 12 Issue 5,2022

Crystal structure, microstructure, electrophysical properties, and thermally induced aging of PZT-CdNb₂O₆ceramics

Andryushin Konstantin, Pavelko Alexey, Sahoo Sushrisangita, Shilkina Lidiya, Nagaenko Alxandr, Andryushina Inna, Moysa Maksim, and Reznichenko Larisa

Solid solution samples of the three-component system (1 − x)Pb(Ti0.5Zr0.5)O3−xCdNb2O6 with x = 0.0125–0.0500, Δx = 0.0125 were obtained by solid phase synthesis followed by sintering using conventional ceramic technology. The crystal structure, microstructure, electrophysical, and thermophysical properties of these cer

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 5, 2244005 (2022)

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Enhanced piezoelectric properties and temperature stability in KNN-based textured ceramics

Yan Lin, Ru Wang, Jiawei Qu, Shuo Gao, Yi Zhang, Junli Yan, Jigong Hao, Peng Li, and Wei Li

Considering the advantages of high Curie temperature and environment-friendly nature of KNN piezoelectric ceramics, the limitation of weak piezoelectric response and their temperature sensitivity to applications is worth exploring. Herein, the textured (1-x)(K0.5Na0.5)(Nb0.96Sb0.04)O3-x(Bi0.5Na0.5)HfO3(x = 0.01−0.045) Considering the advantages of high Curie temperature and environment-friendly nature of KNN piezoelectric ceramics, the limitation of weak piezoelectric response and their temperature sensitivity to applications is worth exploring. Herein, the <001> textured (1-

x

)(K

_{0.5}

Na

_{0.5}

)(Nb

_{0.96}

Sb

_{0.04}

)O₃-

x

(Bi

_{0.5}

Na

_{0.5}

)HfO₃(

x

= 0.01−0.045) lead-free ceramics were synthesized by templated grain-growth method. The high piezoelectric performance (d

_{33}

of 474 pC/N and strain of 0.21%) and excellent temperature stability (unipolar strain maintained within 4.3% change between 30

^{\circ}

C and 165

^{\circ}

C) were simultaneously achieved in the textured KNNS-0.03BNH ceramics. The high piezoelectric performance can be attributed to the summation of the crystallographic anisotropy and phase structure contributions in <001> textured ceramics. The superior temperature stability of piezoelectric properties can be interpreted by the contribution of crystal anisotropy to piezoelectric properties reduces the effect of phase transition on piezoelectric properties deterioration. This study provides an effective strategy for simultaneously achieving high piezoelectric properties and superior temperature stability in KNN-based textured ceramics.Considering the advantages of high Curie temperature and environment-friendly nature of KNN piezoelectric ceramics, the limitation of weak piezoelectric response and their temperature sensitivity to applications is worth exploring. Herein, the <001> textured (1-

x

)(K

_{0.5}

Na

_{0.5}

)(Nb

_{0.96}

Sb

_{0.04}

)O₃-

x

(Bi

_{0.5}

Na

_{0.5}

)HfO₃(

x

= 0.01−0.045) lead-free ceramics were synthesized by templated grain-growth method. The high piezoelectric performance (d

_{33}

of 474 pC/N and strain of 0.21%) and excellent temperature stability (unipolar strain maintained within 4.3% change between 30

^{\circ}

C and 165

^{\circ}

C) were simultaneously achieved in the textured KNNS-0.03BNH ceramics. The high piezoelectric performance can be attributed to the summation of the crystallographic anisotropy and phase structure contributions in <001> textured ceramics. The superior temperature stability of piezoelectric properties can be interpreted by the contribution of crystal anisotropy to piezoelectric properties reduces the effect of phase transition on piezoelectric properties deterioration. This study provides an effective strategy for simultaneously achieving high piezoelectric properties and superior temperature stability in KNN-based textured ceramics..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 5, 2244006 (2022)

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Evaluation of dielectric, energy storage and multiferroic properties of PrFeO₃-PbTiO₃ solid solutions

Mehak Arora, Shubhpreet Kaur, Sunil Kumar, Parambir Singh Malhi, Mandeep Singh, and Anupinder Singh

This work promotes the room temperature energy storage properties of the multiferroics. In this approach, impacts of PrFeO3 doping on PT-based solid solutions (Pb1−xPrxTi1−xFexO3, x = 0.21, 0.22, 0.23, 0.24, 0.25 and 0.26) have been explored. X-ray diffraction (XRD) patterns were used to estimate the crystallographic p This work promotes the room temperature energy storage properties of the multiferroics. In this approach, impacts of PrFeO₃ doping on PT-based solid solutions (Pb

_{1 -}

_{x}

Pr

_{x}

Ti

_{1 -}

_{x}

Fe

_{x}

O₃,

x

= 0.21, 0.22, 0.23, 0.24, 0.25 and 0.26) have been explored. X-ray diffraction (XRD) patterns were used to estimate the crystallographic parameters, confirming the single phase tetragonal structure. The ferroelectric Curie temperature (

T_{c}

^{FE}

) is observed to drop from 410 K to below room temperature as the Pr concentration increases. The ferroelectric P-E loops were used to determine the energy storage values at room temperature. The sample

x

= 0.24 achieved the maximum value of energy storage density of 362.25 mJ/cm³ with the efficiency of 40.5%. The ferroelectric P-E loops were used to determine the energy storage values at room temperature. The validity of magnetoelectric coupling in all samples was confirmed by magneto-dielectric studies and found that the sample

x

= 0.24 shows the maximum response with the coupling coefficient (

γ

) = 15.54 g²/emu².This work promotes the room temperature energy storage properties of the multiferroics. In this approach, impacts of PrFeO₃ doping on PT-based solid solutions (Pb

_{1 -}

_{x}

Pr

_{x}

Ti

_{1 -}

_{x}

Fe

_{x}

O₃,

x

= 0.21, 0.22, 0.23, 0.24, 0.25 and 0.26) have been explored. X-ray diffraction (XRD) patterns were used to estimate the crystallographic parameters, confirming the single phase tetragonal structure. The ferroelectric Curie temperature (

T_{c}

^{FE}

) is observed to drop from 410 K to below room temperature as the Pr concentration increases. The ferroelectric P-E loops were used to determine the energy storage values at room temperature. The sample

x

= 0.24 achieved the maximum value of energy storage density of 362.25 mJ/cm³ with the efficiency of 40.5%. The ferroelectric P-E loops were used to determine the energy storage values at room temperature. The validity of magnetoelectric coupling in all samples was confirmed by magneto-dielectric studies and found that the sample

x

= 0.24 shows the maximum response with the coupling coefficient (

γ

) = 15.54 g²/emu²..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 5, 2250012 (2022)

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Enhancement of electro-strain performance of KTaO₃ modified 0.94Bi

_{0.5}

Na

_{0.5}

TiO₃-0.06BaTiO₃ ceramics

Xinran Wang, Huanghui Nie, Yan Yan, and Gang Liu

The (1−x)(0.94Bi0.5Na0.5TiO3–0.06BaTiO 3)–xKTaO3(BNBT–xKT) lead-free ferroelectric ceramics were produced using the traditional solid-state sintering technique, and the phase structure, surface morphology, electrical properties were all thoroughly examined. Every ceramic has a single perovskite structure and there is n The (1−

x

)(0.94Bi

_{0.5}

Na

_{0.5}

TiO₃–0.06BaTiO ₃)–

x

KTaO₃(BNBT–

x

KT) lead-free ferroelectric ceramics were produced using the traditional solid-state sintering technique, and the phase structure, surface morphology, electrical properties were all thoroughly examined. Every ceramic has a single perovskite structure and there is no second phase, as shown by the XRD patterns and Raman spectra. Scanning electron microscopy revealed that all samples displayed dense microstructure and cubic grain. In addition, KT encourages grain growth due to the oxygen vacancies induced by doping or volatilization of ions at high temperatures. The

T

_{m}

of the ceramics decreases with increasing doping levels due to oxygen vacancies acting as dipoles upon the addition of KT, and the dielectric loss of all samples is low at ambient temperature. In comparison to the pure BNBT ceramic’s bipolar strain value of 0.12%, the BNBT–2KT ceramic achieved a maximum bipolar strain of

\sim

0.506% and unipolar strain of

\sim

0.430% with the corresponding

d

_{33}

*up to 538 pm/V under 80 kV/cm field. Performance significantly improved as a result of this. A test of the correlation between temperature and ferroelectric properties shows that the largest strain value of the BNBT–2KT ceramic occurs at ambient temperature and that the phase change from ferroelectric to relaxor is complete. Additionally, it is discovered that the BNBT–3KT ceramic can sustain a stable strain across a broad temperature range, suggesting that it has good temperature stability. The aforementioned findings demonstrate that lead-based ceramics may be replaced with BNBT–

x

KT ceramics.The (1−

x

)(0.94Bi

_{0.5}

Na

_{0.5}

TiO₃–0.06BaTiO ₃)–

x

KTaO₃(BNBT–

x

KT) lead-free ferroelectric ceramics were produced using the traditional solid-state sintering technique, and the phase structure, surface morphology, electrical properties were all thoroughly examined. Every ceramic has a single perovskite structure and there is no second phase, as shown by the XRD patterns and Raman spectra. Scanning electron microscopy revealed that all samples displayed dense microstructure and cubic grain. In addition, KT encourages grain growth due to the oxygen vacancies induced by doping or volatilization of ions at high temperatures. The

T

_{m}

of the ceramics decreases with increasing doping levels due to oxygen vacancies acting as dipoles upon the addition of KT, and the dielectric loss of all samples is low at ambient temperature. In comparison to the pure BNBT ceramic’s bipolar strain value of 0.12%, the BNBT–2KT ceramic achieved a maximum bipolar strain of

\sim

0.506% and unipolar strain of

\sim

0.430% with the corresponding

d

_{33}

*up to 538 pm/V under 80 kV/cm field. Performance significantly improved as a result of this. A test of the correlation between temperature and ferroelectric properties shows that the largest strain value of the BNBT–2KT ceramic occurs at ambient temperature and that the phase change from ferroelectric to relaxor is complete. Additionally, it is discovered that the BNBT–3KT ceramic can sustain a stable strain across a broad temperature range, suggesting that it has good temperature stability. The aforementioned findings demonstrate that lead-based ceramics may be replaced with BNBT–

x

KT ceramics..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 5, 2250014 (2022)

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A design for preparation of textured piezoelectric ceramics based on the phase-field simulation

Yongmei Zhang, and Liangliang Liu

To solve the problem of directional arrangement of small template particles, we designed a lamination technique for the preparation of dense ceramics with high texture degree based on the phase-field simulation. Referring to the experimental data, the initial microstructures of the template and matrix layers were const

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 5, 2250015 (2022)

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Creation and research of the SAW transducer with a single-phase grid and a piezoelectric zinc oxide film

G. Ya. Karapetyan, M. E. Kutepov, E. M. Kaidashev, and A. L. Nikolaev

A method for obtaining a new type of surface acoustic wave (SAW) transducer operating at double frequency with a single-phase closed-loop lattice and a piezoelectric zinc oxide film is developed and experimentally investigated. A method for calculating such a transducer has been developed, its equivalent circuit has be

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 5, 2250016 (2022)

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Embedding epitaxial VO₂ film with quality metal-insulator transition to SAW devices

M. E. Kutepov, G. Ya. Karapetyan, T. A. Minasyan, V. E. Kaydashev, I. V. Lisnevskaya, K. G. Abdulvakhidov, A. A. Kozmin, and E. M. Kaidashev

Epitaxial VO2 films grown by pulsed laser deposition (PLD) method with superior phase transition related switching characteristics are successfully embedded to SAW devices using concept of the “impedance loaded SAW sensor”. A resistance of VO2 sensor abruptly drops from 0.7 MΩ to 90 Ω when it is heated above ∼65∘C and Epitaxial VO₂ films grown by pulsed laser deposition (PLD) method with superior phase transition related switching characteristics are successfully embedded to SAW devices using concept of the “impedance loaded SAW sensor”. A resistance of VO₂ sensor abruptly drops from 0.7 M

Ω

to 90

Ω

when it is heated above

\sim

65

^{\circ}

C and shows a narrow hysteresis loops when switching. Two designs of SAW devices are examined in which RF signal is reflected back from interdigital transducer (IDT) or a surface acoustic waves (SAW) is transferred through a coupler and the RF response is altered 2 and 3 times correspondingly upon the phase transition in VO₂. In the proposed devices with external load, a SAW does not propagate via VO₂ film and therefore is not attenuated which is beneficiary for wireless applications. Additionally, a SAW phase shift as great as 50

^{\circ}

is induced to the SAW transferred through the coupler due to the phase transition in VO₂. The proposed approach may boost the development of remotely controlled autonomous sensors, including those based on VO₂ metamaterials and hybrid plasmonic structures for near IR/middle IR and sub-THz/THz applications.Epitaxial VO₂ films grown by pulsed laser deposition (PLD) method with superior phase transition related switching characteristics are successfully embedded to SAW devices using concept of the “impedance loaded SAW sensor”. A resistance of VO₂ sensor abruptly drops from 0.7 M

Ω

to 90

Ω

when it is heated above

\sim

65

^{\circ}

C and shows a narrow hysteresis loops when switching. Two designs of SAW devices are examined in which RF signal is reflected back from interdigital transducer (IDT) or a surface acoustic waves (SAW) is transferred through a coupler and the RF response is altered 2 and 3 times correspondingly upon the phase transition in VO₂. In the proposed devices with external load, a SAW does not propagate via VO₂ film and therefore is not attenuated which is beneficiary for wireless applications. Additionally, a SAW phase shift as great as 50

^{\circ}

is induced to the SAW transferred through the coupler due to the phase transition in VO₂. The proposed approach may boost the development of remotely controlled autonomous sensors, including those based on VO₂ metamaterials and hybrid plasmonic structures for near IR/middle IR and sub-THz/THz applications..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 5, 2250018 (2022)

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Colossal dielectric response and complex impedance analysis of LaFeO₃ ceramics

Sushrisangita Sahoo, K. P. Andryushin, P. K. Mahapatra, and R. N. P. Choudhary

The present investigations mainly focused on the colossal dielectric response and complex impedance analysis of LaFeO3 ceramics. The studied sample was prepared by a citrate gel method. Structural and microstructural properties are analyzed from the XRD pattern and SEM micrograph. The anomalies in the dielectric consta The present investigations mainly focused on the colossal dielectric response and complex impedance analysis of LaFeO₃ ceramics. The studied sample was prepared by a citrate gel method. Structural and microstructural properties are analyzed from the XRD pattern and SEM micrograph. The anomalies in the dielectric constant versus temperature plots are analyzed on the basis of polarization induced by the Maxwell-Wagner mechanisms and ferromagnetic interaction between the Fe

^{3 +}

ions driven by the oxygen vacancy mediated Fe

^{3 +}

–V

_{o}

–Fe

^{3 +}

exchange interaction A giant dielectric permittivity in the order of

\sim

10⁵ was observed in the sample even at the room temperature for 100 Hz. The colossal dielectric constant in LaFeO₃ is mainly driven by the internal barrier layer capacitor (IBLC) formation. The formation of IBLC was explained on the basis of highly insulating grain boundary and less resistive/semiconducting grain, which was confirmed from both the resistance and capacitance of grain and grain boundary from the impedance analysis. The non-Debye-type relaxation process associated with the grain and grain boundary effect was investigated from the broad and asymmetric relaxation peak. The relaxation time for both the grain and grain boundary effect was also calculated. In addition to this, we have also analyzed the normalized bode plot of imaginary part of impedance and electrical modulus which suggests the relaxation process dominated by the short-range movement of charge carriers.The present investigations mainly focused on the colossal dielectric response and complex impedance analysis of LaFeO₃ ceramics. The studied sample was prepared by a citrate gel method. Structural and microstructural properties are analyzed from the XRD pattern and SEM micrograph. The anomalies in the dielectric constant versus temperature plots are analyzed on the basis of polarization induced by the Maxwell-Wagner mechanisms and ferromagnetic interaction between the Fe

^{3 +}

ions driven by the oxygen vacancy mediated Fe

^{3 +}

–V

_{o}

–Fe

^{3 +}

exchange interaction A giant dielectric permittivity in the order of

\sim

10⁵ was observed in the sample even at the room temperature for 100 Hz. The colossal dielectric constant in LaFeO₃ is mainly driven by the internal barrier layer capacitor (IBLC) formation. The formation of IBLC was explained on the basis of highly insulating grain boundary and less resistive/semiconducting grain, which was confirmed from both the resistance and capacitance of grain and grain boundary from the impedance analysis. The non-Debye-type relaxation process associated with the grain and grain boundary effect was investigated from the broad and asymmetric relaxation peak. The relaxation time for both the grain and grain boundary effect was also calculated. In addition to this, we have also analyzed the normalized bode plot of imaginary part of impedance and electrical modulus which suggests the relaxation process dominated by the short-range movement of charge carriers..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 12, Issue 5, 2250019 (2022)

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