InGaAs/GaAs single quantum well is grown on different misoriented substrates by the metal-organic chemical vapor deposition (MOCVD) technology. The samples are characterized by photoluminescence (PL) spectroscopy at room temperature. The effect of offset substrates, growth temperature and V/III ratio of quantum well layer on PL wavelength, intensity and full width at half-maximum (FWHM) has been studied. The samples with smaller offset from GaAs substrates (100) towards <111> show the higher PL intensity with narrower FWHM. The PL intensity increases with lower growth temperature of quantum well. The samples with high V/III ratio show high PL intensity while the PL wavelength exhibits red shift.