Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 31 >Issue 2 >Page 129 > Article

Chinese Journal of Lasers
Vol. 31, Issue 2, 129 (2004)

Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask[J]. Chinese Journal of Lasers, 2004, 31(2): 129 Copy Citation Text

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Abstract

Room temperature CW vertical cavity surface emitting lasers were fabricated by tilt ion implanting and optimizing ion distribution around the active region. The device, whose threshold current was as low as 1.4 mA, gives the maximum more than 1 mW light power.

Keywords

ion implanted tungsten wires as mask vertical cavity surface emitting lasers laser technique