1/f Noise of GaAlAs IREDs Over a Wide Range of Bias Currents

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

[1] Shi J W,Sun J E,Ma J.An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers.Microelectronics Reliability, 1994,34(7):1261～1267

[2] Fukuda M,Hirono T,Kano F.Correlation between 1/f noise and semiconductor laser degradation.Qual Reliab Engng Inter,1994,35(10):351～353

[3] Doru Ursutiu,Jones B K.Low-frequency noise used as a lifetime test of LEDs.Semicond Sci Technol,1996,l(11):1133～1136

[4] Zhuang Y Q,Sun Q.Noise as tool to characterize electron device reliability. Acta Electronica Sinca,1996,24(2):82～87

[5] Zhuang Y Q,Sun Q.Optimization analysis on all components of low-frequency noise spectrum for electron devices. Metrologica Sinca,1996,17(2):136～141

[6] Zhang Zh J.Theoretical analysis of photoconductor detection.Acta Photonica Sinica, 1997,26(3):285～288

[7] Zhang P N,Guo W L,Zhang Y M,et al. The integrated Si photo negative resistance device and application.Acta Photonica Sinica, 1999,28(5):424～426

[8] Zhuang Y Q,Sun Q.Noise and its Minimizing Technology in Semiconductor Devices.Beijing:National Defence Industry Press,1993.172～221

[9] Yu L Sh.Semiconductor Hetero junction Physics.Beijing:Scientific & Technical Press,1990.152～175

[10] Bao J L,Zhuang Y Q,Du L,et al.Noise testing and analyzing system of electronic device based on virtual instrumentation.Chinese Journal of Scientific Instruments,2004,3(supplement):351～353