InGaN quantum dots (QDs) have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes (LEDs). In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.