• Acta Photonica Sinica
  • Vol. 51, Issue 12, 1216001 (2022)
Jing ZHANG1, Haicheng LIU1,*, Xiuhua FU1,2, Shengqi WANG3, and Fei YANG4
Author Affiliations
  • 1College of Optoelectronic Engineering,Changchun University of Science and Technology,Changchun 130022,China
  • 2Zhongshan Research Institute,Changchun University of Science and Technology,Zhongshan,Guangdong 528436,China
  • 3Guang Chi Technology(Shanghai)Co.,Ltd.,Shanghai 200444,China
  • 4Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China
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    DOI: 10.3788/gzxb20225112.1216001 Cite this Article
    Jing ZHANG, Haicheng LIU, Xiuhua FU, Shengqi WANG, Fei YANG. Research on Improving the Uniformity of Optical Communication Filter Film by Ion Beam Etching[J]. Acta Photonica Sinica, 2022, 51(12): 1216001 Copy Citation Text show less
    DWDM theoretical design curve
    Fig. 1. DWDM theoretical design curve
    Rotating plane fixture geometry configuration
    Fig. 2. Rotating plane fixture geometry configuration
    The theoretical and actual film thickness distribution curves of the two materials without ion source assistance
    Fig. 3. The theoretical and actual film thickness distribution curves of the two materials without ion source assistance
    Film thickness distribution curves of the two materials with and without ion source assistance
    Fig. 4. Film thickness distribution curves of the two materials with and without ion source assistance
    The energy distribution curve corresponding to different acceleration voltages of the focused ion source
    Fig. 5. The energy distribution curve corresponding to different acceleration voltages of the focused ion source
    Correspondence between film uniformity and ion source acceleration voltage
    Fig. 6. Correspondence between film uniformity and ion source acceleration voltage
    The energy distribution of the ion source under different ion source voltages
    Fig. 7. The energy distribution of the ion source under different ion source voltages
    Uniformity of the two materials under different ion source voltages
    Fig. 8. Uniformity of the two materials under different ion source voltages
    Film thickness distribution curves of two materials under different ion source currents
    Fig. 9. Film thickness distribution curves of two materials under different ion source currents
    The etching rate of the two materials under different ion source currents.
    Fig. 10. The etching rate of the two materials under different ion source currents.
    Film thickness distribution curve of SiO2 monolayer film under different ion source parameters
    Fig. 11. Film thickness distribution curve of SiO2 monolayer film under different ion source parameters
    Schematic diagram of calculating method of measuring point and effective coating area
    Fig. 12. Schematic diagram of calculating method of measuring point and effective coating area
    Spectral test curve
    Fig. 13. Spectral test curve
    Material optical constants
    Fig. 14. Material optical constants
    Improved filter film spectrum curve
    Fig. 15. Improved filter film spectrum curve
    ParametersIndicators
    Central wave length/nm1 557.363
    Angle of incident/(°)0
    Incident mediumAir
    Pass band/nmCWL+/-0.24
    Ripple within passband/dB≤0.2
    Maximum IL within passband/dB≤0.2
    Reflection band/nm1 550~(CWL-0.56)&(CWL+0.56)~1 600.5
    Reflection Isolation within passband/dB≥13.5
    Effective coating area/mm2≥1 500
    Table 1. Technical requirements for narrowband filter film
    Material

    Thickness/

    nm

    Substance

    Temperature/

    Rate/

    (nm·s-1

    Flow/

    (mL·min-1

    Crucible speed/(r·min-1
    Ta2O5800K92200.4301/600
    SiO21 200ZF52000.801/600
    Table 2. Process parameters of two materials
    MaterialBeam voltage/VBeam current/mAAccelerating voltage/VAngle/(°)E/B/%

    Gas1 O2

    /sccm

    Gas2 Ar

    /sccm

    Gas3 Ar

    /sccm

    Ta2O5870185600212005008
    SiO2870165750212005008
    Table 3. Ion source parameters
    Material

    Beam

    voltage/V

    Beam

    current/mA

    Accelerating voltage /V

    Uniformity

    /%

    9002006000.18
    Ta2O59002007000.06
    9002007500.05
    9001656000.27
    SiO29001657000.11
    9001657500.09
    Table 4. Uniformity of the two materials under different ion source acceleration voltages
    Material

    Beam

    voltage/V

    Beam

    current/mA

    Accelerating voltage /V

    Uniformity

    /%

    9002007500.05
    Ta2O57502007500.15
    6002007500.17
    9001657500.09
    SiO27501657500.14
    6001657500.18
    Table 5. Uniformity of the two materials under different ion source voltages
    Material

    Beam

    voltage/V

    Beam

    current/mA

    Accelerating voltage /V

    Uniformity

    /%

    9001807500.14
    Ta2O59002007500.05
    9002307500.08
    9001657500.09
    SiO29001857500.17
    9002007500.28
    Table 6. Uniformity of the two materials under different ion source currents
    Material

    Beam

    voltage/V

    Beam

    current/mA

    Accelerating voltage /VAverage etching rate /(nm·min-1
    9001807501.02
    Ta2O59002007501.28
    9002307501.66
    9001657504.08
    SiO29001857504.3
    9002007504.81
    Table 7. The average etching rate of the ion source on the two film materials
    Number

    Beam

    voltage/V

    Beam

    current/mA

    Accelerating voltage /V

    Uniformity

    /%

    Test 19001657000.11
    Test 29001857000.11
    Test 39002007000.28
    Test 49001656000.13
    Test 59001856000.20
    Test 69002006000.49
    Table 8. SiO2 monolayer membrane ion source parameters
    MaterialBeam voltage/VBeam current/mAAccelerating voltage/VAngle/(°)E/B/%

    Gas1 O2

    /sccm

    Gas2 Ar

    /sccm

    Gas3 Ar

    /sccm

    Ta2O59002007502120050015
    SiO29001657502120050015
    Table 9. Process parameters of filter film ion source
    MaterialBeam voltage/VBeam current/mAAccelerating voltage/VAngle/(°)E/B/%

    Gas1 O2

    /sccm

    Gas2 Ar

    /sccm

    Gas3 Ar

    /sccm

    Ta2O59002006002120050015
    SiO29001857502120050015
    Table 10. Final ion source process parameters
    Jing ZHANG, Haicheng LIU, Xiuhua FU, Shengqi WANG, Fei YANG. Research on Improving the Uniformity of Optical Communication Filter Film by Ion Beam Etching[J]. Acta Photonica Sinica, 2022, 51(12): 1216001
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