Experimental research on silicon materials irradiated by 980 nm laser was performed in order to accurately obtain the temperature characteristics of semiconductor silicon materials during laser processing. The characteristic curves of silicon material are obtained by contacted and infrared non-contacted methods. And the characteristic change rules are analyzed under laser irradiation. Results show that the infrared radiation from laser irradiation is not only related to the temperature of the material, but also is related to incident laser wavelength, strength and time. For the temperature change of laser irradiation silicon material in real time not being correctly calibrated by the traditional non-contacted infrared temperature measurement method, a new calibration method is needed. The research is important to parameter calibration of non-contacted temperature measuring equipments during laser processing.