[1] T. Inokuma, Y. Wakayama, T. Muramoto et al.. Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiOx films [J]. J. Appl. Phys., 1998, 83(4)：2228~2234

[2] T. S. Iwayama, K. Fujita, S. Nakao et al.. Visible photoluminescence in Si+-implanted silica glass [J]. J. Appl. Phys., 1994, 75(12):7779～7783

[3] T. Yasuda, M. Nishizawa, S. Yamasaki et al.. Controlled bond formation between chemical vapor deposition Si and ultrathin SiO2 layers [J]. J. Vac. Sci. Technol. B, 2000, 18(3):1752～1756

[4] E. Werwa, A. A. Seraphin, L. A. Chiu et al.. Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion method [J]. Appl. Phys. Lett., 1994, 64(14):1821～1823

[5] T. Scharf, H. U. Krebs. Influence of inert gas pressure on deposition rate during pulsed laser deposition [J]. Appl. Phys. A, 2002, 75(5):551～554

[6] T. Yoshida, S. Takeyama, Y. Yamada et al.. Nanometer-sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas [J]. Appl. Phys. Lett., 1996, 68(13):1772～1774

[7] A. Hadjadj, L. Boufendi, S. Huet et al.. Role of the surface roughness in laser induced crystallization of nanostructured silicon films [J]. J. Vac. Sci. Technol. A, 2000, 18(2):529～535