• Chinese Journal of Lasers
  • Vol. 31, Issue 7, 857 (2004)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measuring the High-Frequency Characteristics of Chip Photodiodes[J]. Chinese Journal of Lasers, 2004, 31(7): 857 Copy Citation Text show less
    References

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    [2] P. Debie, L. Martens. Correction technique for on-chip modulation response measurements of optoelectronic devices[J]. IEEE Trans. Microwave Theory Tech., 1995, 43(6):1264~1269

    [3] N. H. Zhu, Y. Liu, E. Y. B. Pun et al.. Scattering-parameter measurements of laser diodes[J]. Optical and Quantum Electron., 2002, 34:747~757

    [4] P. Debie, L. Martens, D. Kaiser. Improved error correction technique for on-wafer lightwave measurements of photodetectors[J]. IEEE Photon. Technol. Lett., 1995, 7(4):418~420

    [5] P. D. Hale, T. S. Clement, D. F. Williams et al.. Measuring the frequency response of gigabit chip photodiodes[J]. J. Lightwave Technol., 2001, 19(9):1333~1339

    [7] R. A. Speciale. A generalization of the TSD Network-Analyzer calibration procedure, covering n-port scattering-parameter measurements, affected by leakage errors[J]. IEEE Trans. Microwave Theory Tech., 1977, 25(12):1100~1115

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measuring the High-Frequency Characteristics of Chip Photodiodes[J]. Chinese Journal of Lasers, 2004, 31(7): 857
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