[1] LEE Y CH,SWIRHUM S E,FU W S,et al.. Thermal management of VCSEL-bases optoelectronic modules［J］.IEEE Transactions on Components, Packaging, and Manufacturing Technology-Part B, 1996,19(3): 540-547.
[2] DEPPE D G,HUFFAKER D L, OH T H, et al.. Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed bragg reflectors［J］. IEEE Quantum Electronics, 1997, 3(3): 893-904.
[3] LI Z J, HU L M, WANG Y, et al.. Facet coating for 808nm Al-containing semiconductor laser diodes［J］. Opt. Precision Eng., 2010, 18(6): 1258-1262. (in Chinese)
[4] GU Y Y, FENG G ZH, SHAN X N, et al.. 808 nm and 980nm high power laser diode stack with wavelength coupling［J］. Opt. Precision Eng., 2009,17(1): 8-13. (in Chinese)
[5] WANG X P, LIANG X M, LI Z J, et al.. 880nm semiconductor laser diode arrays and fiber coupling module［J］.Opt. Precision Eng., 2010, 18(5): 1021-1027. (in Chinese)
[6] SUA S T,TANG SH F,CHENA T CH,et al.. Temperature dependent VCSEL optical characteristics based on graded AlxGa1-xAs/GaAs distributed bragg reflectors: reflectivity and beam profile analysis［J］. SPIE, 2006, 6132: 61320L.
[7] TSAI CH L,LEE F M,CHENG F Y,et al.. Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for 10 Gb/s data transmission［J］. IEEE Electron Device Letters, 2005, 26(5): 304-307.
[8] WANG X P, LI Z J, LIU Y, et al.. Smile effect and package technique for diode laser arrays［J］. Opt. Precision Eng., 2010, 18(3): 552-557.(in Chinese)
[9] CONG M L, LI L, CUI Y S, et al.. Design of high stability digital control driving system for semiconductor laser［J］. Opt. Precision Eng., 2010, 18(7): 1629-1636. (in Chinses)
[10] CHEN Y CH, ZHAO B T, LI W. High peak power semiconductor laser module for producing nanosecond pulse［J］. Opt. Precision Eng., 2009, 17(4): 695-700. (in Chinese)
