Study on induced doping to semiconductor by e-beam controlled discharge CO2laser

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 19 >Issue 8 >Page 606 > Article

Chinese Journal of Lasers
Vol. 19, Issue 8, 606 (1992)

Study on induced doping to semiconductor by e-beam controlled discharge CO₂laser

[in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese]. Study on induced doping to semiconductor by e-beam controlled discharge CO₂laser[J]. Chinese Journal of Lasers, 1992, 19(8): 606 Copy Citation Text

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Abstract

The pulse energy of c-bsam controlled disoharge CO2 lagsr is 50 J. The diameter of light spot is 60 ram and after being foeusad it bscomes to 20 mm. The induced doping of stibium (Sb) or aluminium (Al) in silicon (Si) is carried out by CO2 laser. A shallower of p-n janctionwith a diamatar of 10-15mm (mix. 20 mm) and a dapth of 0.2-0.7um is obtained. Photo-voltage of p-n junction is about 500 mV.

Keywords

controlled discharge induced doping e-beam

[in Chinese], [in Chinese], [in Chinese]. Study on induced doping to semiconductor by e-beam controlled discharge CO₂laser[J]. Chinese Journal of Lasers, 1992, 19(8): 606

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