Simulation and design of HgCdTe nBn detectors grown by MBE

SHEN Chuan; CHEN Lu; FU Xiang-Liang; WANG Wei-Qiang; PU Shun-Dong; HE Li

doi:10.11972/j.issn.1001-9014.2016.03.004

Journals >Journal of Infrared and Millimeter Waves >Volume 35 >Issue 3 >Page 271 > Article

Journal of Infrared and Millimeter Waves
Vol. 35, Issue 3, 271 (2016)

Simulation and design of HgCdTe nBn detectors grown by MBE

SHEN Chuan^*, CHEN Lu, FU Xiang-Liang, WANG Wei-Qiang, PU Shun-Dong, and HE Li

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[in Chinese]

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DOI: 10.11972/j.issn.1001-9014.2016.03.004 Cite this Article

SHEN Chuan, CHEN Lu, FU Xiang-Liang, WANG Wei-Qiang, PU Shun-Dong, HE Li. Simulation and design of HgCdTe nBn detectors grown by MBE[J]. Journal of Infrared and Millimeter Waves, 2016, 35(3): 271 Copy Citation Text

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Abstract

In this paper, 2-D numerical simulation was performed on HgCdTe nBn detectors to study the photoelectric characteristics. We changed the parameters of each layer of HgCdTe nBn structure, including thickness, doping concentration and Cd composition, to study the variation of performance of nBn devices. We also proposed an optimal nBn structure for achieving high performance of HgCdTe nBn Detectors.

Keywords

HgCdTe nBn numerical simulation HgCdTe MBE

SHEN Chuan, CHEN Lu, FU Xiang-Liang, WANG Wei-Qiang, PU Shun-Dong, HE Li. Simulation and design of HgCdTe nBn detectors grown by MBE[J]. Journal of Infrared and Millimeter Waves, 2016, 35(3): 271

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