Shunli HE, Xianling MENG, Ning CAO, Bin XIA, Chuanlong SUN, Ruhan LUAN, Lichun ZHANG. Preparation of Cs3Cu2Br5/n-Si Heterojunction Deep Ultraviolet Photodetector via Vacuum Thermal Evaporation Technique[J]. Acta Photonica Sinica, 2024, 53(11): 1104001
- Acta Photonica Sinica
- Vol. 53, Issue 11, 1104001 (2024)
Fig. 1. XRD of Cs3Cu2Br5 thin films grown at different substrate temperatures
Fig. 2. Surface SEM images of Cs3Cu2Br5 thin films grown at different substrate temperatures
Fig. 3. EDS spectrum of Cs3Cu2Br5 thin film
Fig. 4. The absorption spectrum of Cs3Cu2Br5 thin film grown at 50 ℃，and the absorption spectrum of Cs3Cu2Br5 thin films grown at different substrate temperatures
Fig. 5. PL and PLE spectra of Cs3Cu2Br5 thin films deposited at 50 ℃
Fig. 6. PL spectra of Cs3Cu2Br5 thin films grown at different substrate temperatures and Diagram of the relationship between the full width at half height （FWHM） of PL and temperature
Fig. 7. Structural schematic of heterojunction device
Fig. 8. Current voltage curve （logarithmic form） and on/off ratio curve of Cs3Cu2Br5/Si photodetector under dark and light conditions （illustration）
Fig. 9. The current-voltage curves of Cs3Cu2Br5/n-Si devices under different light intensities under I-V bias voltage and Spectral responsivity and detection rate of Cs3Cu2Br5/Si device under -1 V bias voltage （illustration）
Fig. 10. Band of Cs3Cu2Br5/n-Si according to Anderson model
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Table 1. Performance comparisons of DUV photodetector devices by Cu-based perovskite
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