[1] DAATA S. Quantum transport: atomto transistor[M]. New York: Cambridge University Press, 2005.
[2] SULLIVAN D M.Quantum mechanics for electrical engineers[M]. Hoboken: John Wiley &Sons, 2012.
[3] MILAN B, STEFAN S, CHRISTOPHER P S. Quantum inductance and high frequency oscillators in graphene nanoribbons[J]. Nanotechnology, 2011, 22(16): 165203.
[4] MENCARELLI D, ROZZI T, PIERANTOMI L. Scattering matrix approach to multichannel transport in many lead graphenenanoribbons[J].Nanotechnology, 2010, 21(15): 155701.
[5] MARTEL R, SCHMIDT T, SHEA H R, et al. Singleand multiwall carb onnanotube field-effect transistor[J]. Applied Physics Letters, 1998, 73(17): 2447-2449.
[7] HUANG Bing, YAN Qi-min, LI Zuan-yi, et al. Towards graphene nanoribbon-based electronics[J]. Frontiers of Physics in China, 2009, 4(3): 269-279.
[8] SULLIVAN D M, WILSON P M. Time-domain determination of transmission in quantum nanostructures[J].Journal of Appied Physics, 2012, 112(6): 064325.
[9] HUANG Z, KOSCHNY T, SOUKOULIS C M. Theory of pump-probe experiments of metallic metamaterials coupled to a gain medium[J]. Physical Review Letters, 2012, 108(18): 187402.
[10] HUANG Z, WU B, ZHANG H, et al. Parallel implication of 3-D FDTD method in a four-level atomic system[J]. IEEE Journal of Quantum Electronics, 2012, 48(7): 908-914.
[12] HUANG Z, WU X L. Optimal symplectic integrators for numerical solution of time-domain Maxwell's equations[J].Microwave and Optical Technology Letters, 2007, 49(3): 545-547.
[13] SHA W, HUANG Z, WU X L. Total field and scattered field technique for fourth-order symplectic finite difference time domain method[J]. Chinese Physcis Letter, 2006, 23(7): 103-105.
[14] LI Rong, WU Xin. A symmetric product of two optimal third-order force gradient symplecticalgorithms[J].Acta Physica Sinica, 2010, 59(10): 7135.
[15] LI Rong, WU Xin. Two new fourth-order three-stage symplectic integrators[J]. Chinese Physics Letters, 2011, 28(7): 070201.
[16] SHEN J, SHA W, HUANG Z, et al. High-order symplectic FDTD scheme for solving a time-dependent Schrodinger equation[J]. Computer Physics Communication, 2013, 184(3): 480-492.
[18] HAN Ming-jun, KE Dao-ming, CHI Xiao-li. A 2D semi-analytical model for the potentialdistribution of ultra-short channel MOSFET[J]. Acta Physica Sinica, 2013, 62(9): 098502.