Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

Jingbo Liu; Pingjian Li; Yuanfu Chen; Xinbo Song; Fei Qi; Binjie Zheng; Jiarui He; Qiye Wen; Wanli Zhang

doi:10.3788/COL201614.052301

Journals >Chinese Optics Letters >Volume 14 >Issue 5 >Page 052301 > Article

Chinese Optics Letters
Vol. 14, Issue 5, 052301 (2016)

Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

Jingbo Liu, Pingjian Li^*, Yuanfu Chen^**, Xinbo Song, Fei Qi, Binjie Zheng, Jiarui He, Qiye Wen, and Wanli Zhang

Author Affiliations

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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DOI: 10.3788/COL201614.052301 Cite this Article Set citation alerts

Jingbo Liu, Pingjian Li, Yuanfu Chen, Xinbo Song, Fei Qi, Binjie Zheng, Jiarui He, Qiye Wen, Wanli Zhang. Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss[J]. Chinese Optics Letters, 2016, 14(5): 052301 Copy Citation Text

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