In order to overcome the shortcomings of traditional mechanical and electronic pressure switches, such as the production process is complex and it is difficult to integrate with the follow-up circuit, bulky and so on, the design and preparation of passive MEMS pressure switch were developed by using glass frit encapsulation technology with metal lead coverage in this paper. The overall structure of the passive MEMS pressure switch was designed to include the pressure sensitive film, the silicon island and the upper electrode on the silicon cover and the micro-barrier bumps, the glass paste and the lower electrode on the glass substrate. The key dimensions of pressure sensitive film, silicon islands and upper and lower electrodes were optimized by simulation. After three wet etching processes, double barrier bump, silicon island and pressure sensitive film were fabricated. The silicon cover, the glass substrate and the metal lead were then bonded together as a whole by glass frit thermal-pressure bonding process. The results show that the height of the double-barrier bumps and the thickness of the pressure-sensitive film are well controlled at 8 μm and 50 μm, respectively. And the threshold pressure of the MEMS pressure switch is 125 kPa.