XPS and PL Studies of GaN Epilayers Grown on SiC Substrate

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 32 >Issue 12 >Page 1510 > Article

Acta Photonica Sinica
Vol. 32, Issue 12, 1510 (2003)

XPS and PL Studies of GaN Epilayers Grown on SiC Substrate

[in Chinese]^1、2, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese]. XPS and PL Studies of GaN Epilayers Grown on SiC Substrate[J]. Acta Photonica Sinica, 2003, 32(12): 1510 Copy Citation Text

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[in Chinese], [in Chinese], [in Chinese]. XPS and PL Studies of GaN Epilayers Grown on SiC Substrate[J]. Acta Photonica Sinica, 2003, 32(12): 1510

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