Study on MOVPE Growth of 1.3 μm Uncooled AlGaInAs/InP Strain-compensated Quantum Well Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 29 >Issue 3 >Page 193 > Article

Chinese Journal of Lasers
Vol. 29, Issue 3, 193 (2002)

Study on MOVPE Growth of 1.3 μm Uncooled AlGaInAs/InP Strain-compensated Quantum Well Lasers

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on MOVPE Growth of 1.3 μm Uncooled AlGaInAs/InP Strain-compensated Quantum Well Lasers[J]. Chinese Journal of Lasers, 2002, 29(3): 193 Copy Citation Text

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Abstract

AlGaInAs strain-compensated quantum wells have been grown by LP-MOVPE. By X-ray diffraction, photoluminescence and SIMS, the properties of the materials and the oxygen concentration in AlGaInAs materials are analyzed. A high quality (PL FWHM=26 meV: room temperature) AlGaInAs strain-compensated quantum well through optimized MOVPE process is obtained. By the wafers, the 1.3 μm uncooled AlGaInAs strain-compensated quantum well lasers have been fabricated. The results of the laser chips are: 1290 nm≤λ≤1330 nm, I th(25℃)≤15 mA, I th(85℃)≤25 mA and Δη ex(25～85℃)≤1.0 dB.

Keywords

LP-MOVPE strain-compensated quantum well uncooled AlGaInAs

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