Huai-Meng Gui, Wei Shi. Effect of capacitance on positive and negative symmetric pulse with fast rising edge based on GaAsphotoconductive semiconductor switch [J]. Acta Physica Sinica, 2019, 68(19): 194206-1
- Acta Physica Sinica
- Vol. 68, Issue 19, 194206-1 (2019)
Fig. 1. Schematic diagram of GaAs PCSS.GaAs PCSS结构图
Fig. 2. Schematic diagram of scanning circuit.扫描电路结构图
Fig. 3. Testing test circuit of scanning circuit.扫描电路测试电路图
Fig. 4. The output waveforms of 33 pF capacitor at the bias voltage is ± 1.9 kV.储能电容为33 pF, 偏置电压为± 1.9 kV时的输出波形图
Fig. 5. The output waveforms at the bias voltage is ± 2.0 kV(insert is rising edge output waveform).外加偏置电压为± 2.0 kV时的输出波形图(插图为上升沿波形图)
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Table 1. The voltage transmission efficiency of output waveformwith different energy storage capacitor.
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Table 2. The rise time of output waveform with different energy storage capacitor.
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