Effect of Electron Radiation in 1.3 μm InGaAsP Semicou ductor Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 28 >Issue 6 >Page 497 > Article

Chinese Journal of Lasers
Vol. 28, Issue 6, 497 (2001)

Effect of Electron Radiation in 1.3 μm InGaAsP Semicou ductor Laser

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of Electron Radiation in 1.3 μm InGaAsP Semicou ductor Laser[J]. Chinese Journal of Lasers, 2001, 28(6): 497 Copy Citation Text

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Abstract

1.3 μm InGaAsP laser diodes are widelyused in optical fiber transference system. In order to expand the application in otherfields, the effect of electron radiation of 1.3 μm InGaAsP laser diodes is studied. The results show thatfor the energy of electron ranges from 0.4 MeV to 1.8 MeV, the fluence of 1×1015cm-2 is a critical point, beyond which, the laser diodes are damaged. The Y2O3-ZrO2coatings are valuable to the la ser diodes for radiation protection.

Keywords

electron radiation Y2O3-ZrO2 film InGaAsP semiconductor laser

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of Electron Radiation in 1.3 μm InGaAsP Semicou ductor Laser[J]. Chinese Journal of Lasers, 2001, 28(6): 497

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