Richard Soref, "Mid-infrared 2 × 2 electro-optical switching by silicon and germanium three-waveguide and four-waveguide directional couplers using free-carrier injection," Photonics Res. 2, 102 (2014)
- Photonics Research
- Vol. 2, Issue 5, 102 (2014)
Fig. 1. MZI 2 × 2 π π
Fig. 2. MZI 2 × 2 ρ Δ β L = π Δ k
Fig. 3. Top view of three-waveguide directional coupler 2 × 2
Fig. 4. 4 × 4
Fig. 5. 4 × 4
Fig. 6. 4 × 4
Fig. 7. Top view of 3w symmetric coupler with one central active waveguide and two adjoining passive waveguides. CW light is launched from WG1.
Fig. 8. “2w” and “3w” 2 × 2
Fig. 9. Parameters of Si (a) 3w and (b) 4w used in 1.32 μm simulations.
Fig. 10. Beam-propagation simulation at 1.32 μm for Si 4w with (a) L c = 750 μm L c = 370 μm Δ n = Δ k = 0 Δ β L = 14.3 Δ k = 0 Δ β L = 14.3 ρ = Δ n / Δ k = 10
Fig. 11. (a) IL and (b) CT versus Δ β L L c = 750 μm Δ k = 0
Fig. 12. Beam-propagation simulation at 1.32 μm for (a) Si 4w with L c = 750 μm L c = 1500 μm Δ n = Δ k = 0 Δ n = 0.004 Δ k = 0 Δ n = 0.004 Δ k = 0.001
Fig. 13. Bar-state IL and CT as a function of ρ
Fig. 14. Parameters of Ge (a) 3w and (b) 4w used in 12 μm simulations.
Fig. 15. Beam-propagation simulation at 12 μm for (a) Ge 4w and (b) Ge 3w at zero bias (solid lines), lossless injection (dashed lines), and lossy injection (dotted lines).
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Table 1. Change in Silicon Waveguide Core Index at a Carrier Injection Level of
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Table 2. Change in Germanium Waveguide Core Index at a Carrier Injection Level of
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Table 3. Minimum Device Length in Si and Ge Required to Meet the
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