980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 33 >Issue suppl >Page 240 > Article

Chinese Journal of Lasers
Vol. 33, Issue suppl, 240 (2006)

980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser

[in Chinese]^1、2、*, [in Chinese]^1、2, [in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser[J]. Chinese Journal of Lasers, 2006, 33(suppl): 240 Copy Citation Text

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Abstract

Using period resonance gain structure, a laser diode (LD) pumped 980 nm vertical external-cavity surface-emitting laser (VECSEL) with active region of InGaAs/GaAsP/AlGaAs system is developed. The characteristic parameters such as longitudinal confinement factor, threshold gain, optical gain and output power etc. are calculated through theoretical model. With the optimized characteristic parameters, the structure of VECSEL is designed. Theoretical calculations show that the output power of a LD-pumped VECSEL can be higher than 1.0 W.

Keywords

optical pumping semiconductor laser vertical external-cavity surface emitting laser lasers technique

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