• Chinese Journal of Lasers
  • Vol. 38, Issue 8, 802008 (2011)
Qu Wancheng1、2、3、*, Huang Yao1、2、3, Guan Hua1、2, Huang Xueren1、2, and Gao Kelin1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/cjl201138.0802008 Cite this Article Set citation alerts
    Qu Wancheng, Huang Yao, Guan Hua, Huang Xueren, Gao Kelin. 397 nm Semiconductor Laser Stabilized with Scanning Transfer Cavity[J]. Chinese Journal of Lasers, 2011, 38(8): 802008 Copy Citation Text show less

    Abstract

    Because of the large long-term drift, the commercial semiconductor laser cannot meet the requirement of the experiments of laser cooling and probing of single ions trapped in ion traps of optical frequency standards for a long time. So, the transfer cavity is used to reduce the long-term drift of a commercial 397 nm laser. An ultra-narrow 729 nm laser stabilized to a super cavity by Pound-Drever-Hall (PDH) scheme is used as reference, and a scanning Fabry-Perot (F-P) cavity is used as transfer medium. The 397 nm laser′s long-term drift is reduced to less than 1 MHz within 1 h, and the square root of the Allan variance is 1×10-10 at an averaging time of 102 s. These parameters are the base for stabilizing an 866 nm laser and optimizing the laser cooling and long-term measurement of single 40Ca+ ion.
    Qu Wancheng, Huang Yao, Guan Hua, Huang Xueren, Gao Kelin. 397 nm Semiconductor Laser Stabilized with Scanning Transfer Cavity[J]. Chinese Journal of Lasers, 2011, 38(8): 802008
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