Fig. 1. Schematic of experimental device

Fig. 2. Raman spectra and spectral peak intensity ratios of 4H-SiC sample surface irradiated by different numbers of laser pulses

Fig. 3. Raman spectra of 4H-SiC sample surface irradiated by laser with different energy densities

Fig. 4. AFM morphology of Si-plane (0001) and a-plane (11?20) of SiC sample surface after 8000 pulses of laser irradiation with different energy densities. (a) Si-plane (0001), 1.0 J/cm²; (b) Si-plane (0001), 1.06 J/cm²; (c) Si-plane (0001), 1.13 J/cm²; (d) Si-plane (0001), 1.19 J/cm²; (e) a-plane (11?20), 1.0 J/cm²; (f) a-plane (11?20), 1.06 J/cm²; (g) a-plane (11?20), 1.13 J/cm²; (h) a-plane (11?20), 1.19 J/cm²

Fig. 5. 4H-SiC supercell model and schematics of arrangement of different crystal plane atoms. (a) Supercell ball bat model; (b) Si-plane (0001) atom arrangement diagram; (c) a-plane (11?20) atom arrangement diagram

Fig. 6. Schematics of graphene growth after laser irradiating 4H-SiC sample. (a) Irradiating Si-plane (0001); (b) irradiating a-plane(11 20)

Fig. 7. High resolution transmission electron microscope (HRTEM) images of 4H-SiC after after laser irradiation (a) Irradiating Si-plane (0001) of SiC sample and the illustration is selected area enlarged view; (b) irradiating a-plane (0001) of SiC sample and the illustration is selected area enlarged view

Table 1. Hall effect measurement for sample surface after Si-plane (0001) is irradiated by laser with different energy densities (number of pulse is 8000)

Table 2. Hall effect measurement for sample surface after a-plane (11?20) is irradiated by laser with different energy densities (number of pulse is 8000)