• Semiconductor Optoelectronics
  • Vol. 45, Issue 6, 898 (2024)
DENG Yafeng1,2, ZHAO Yafei2,3, and HE Liang1,2
Author Affiliations
  • 1School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, CHN
  • 2National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, CHN
  • 3School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, CHN
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    DOI: 10.16818/j.issn1001-5868.2024071603 Cite this Article
    DENG Yafeng, ZHAO Yafei, HE Liang. Evolution of the Valence Band in Bulk Black Phosphorus Regulated by Temperature and Tensile Strain[J]. Semiconductor Optoelectronics, 2024, 45(6): 898 Copy Citation Text show less

    Abstract

    Using angle-resolved photoemission spectroscopy (ARPES) combined with a thin-film stretching holder, the temperature-dependent band measurements of bulk black phosphorus were initially conducted, before performing band measurements under tensile strain at 200 ℃. The results show that as the heating temperature increases from 30 ℃ to 200 ℃, the valence band maximum (VBM) gradually shifts towards deeper levels. This change is attributed to the weakening of interlayer interactions due to thermal expansion of the lattice. The strain-ARPES measurements at 200 ℃ indicate that as the tensile strain along the zigzag direction increases, the VBM exhibits a linear shift towards shallower levels, with a shift rate of 17.8 MeV/% strain. This is because at high temperatures, the tensile strain induces a greater lattice contraction in the out-of-plane direction, resulting in a more significant enhancement of interlayer interactions, which subsequently leads to a more pronounced VBM shift.
    DENG Yafeng, ZHAO Yafei, HE Liang. Evolution of the Valence Band in Bulk Black Phosphorus Regulated by Temperature and Tensile Strain[J]. Semiconductor Optoelectronics, 2024, 45(6): 898
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