• Chinese Journal of Lasers
  • Vol. 46, Issue 2, 0203002 (2019)
Yubin Kang*, Jilong Tang, Jian Zhang, Xuan Fang, Dan Fang, Dengkui Wang, Fengyuan Lin, and Zhipeng Wei
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology,Jilin, Changchun 130022, China
  • show less
    DOI: 10.3788/CJL201946.0203002 Cite this Article Set citation alerts
    Yubin Kang, Jilong Tang, Jian Zhang, Xuan Fang, Dan Fang, Dengkui Wang, Fengyuan Lin, Zhipeng Wei. Crystallization Quality and Optical Properties of High Strain InxGa1-xAs Film[J]. Chinese Journal of Lasers, 2019, 46(2): 0203002 Copy Citation Text show less
    RHEED diffraction pattern during growth. (a) Deoxidation processing of GaAs substrate; (b) growth of GaAs buffer layer; (c) growth of InxGa1-xAs film by adding In component; (d) growth of InxGa1-xAs film
    Fig. 1. RHEED diffraction pattern during growth. (a) Deoxidation processing of GaAs substrate; (b) growth of GaAs buffer layer; (c) growth of InxGa1-xAs film by adding In component; (d) growth of InxGa1-xAs film
    Optical photograph of InxGa1-xAs film and corresponding XRD image. (a) Optical photograph; (b) XRD image
    Fig. 2. Optical photograph of InxGa1-xAs film and corresponding XRD image. (a) Optical photograph; (b) XRD image
    PL spectra of InxGa1-xAs film at room temperature, inset shows energy band diagram corresponding to luminescence at room temperature
    Fig. 3. PL spectra of InxGa1-xAs film at room temperature, inset shows energy band diagram corresponding to luminescence at room temperature
    Raman spectra of InxGa1-xAs film and GaAs substrate at room temperature
    Fig. 4. Raman spectra of InxGa1-xAs film and GaAs substrate at room temperature
    Yubin Kang, Jilong Tang, Jian Zhang, Xuan Fang, Dan Fang, Dengkui Wang, Fengyuan Lin, Zhipeng Wei. Crystallization Quality and Optical Properties of High Strain InxGa1-xAs Film[J]. Chinese Journal of Lasers, 2019, 46(2): 0203002
    Download Citation