In this paper an application of the enhanced cavity in far detuning atom-lithography has been discussed. By reducing the Guassian beam waist and increasing laser power in the cavity, the requirement for the near resonant atom-lithography can be met. The numerical result shows that the FMHW of the lines deposited on the substrate at the centre of the laser beam in far detuning atom-lithography is much less than that in near resonant atom-lithography under the same angle deviation. So the enhanced cavity provides an approach to the atom-lithography.