• Acta Photonica Sinica
  • Vol. 32, Issue 1, 121 (2003)
[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Effect of Deep Level Impurity on the Nonlinear Performances of Photoconductive Semiconductor Switches[J]. Acta Photonica Sinica, 2003, 32(1): 121 Copy Citation Text show less
    References

    [1] Rosen A, Zutavern F J. High-Power Optically Activated Solid-State Switches. Artech House, Boston, 1993.1~296

    [2] Brinkmann R P. Nonlinear behavior of optically activated switches at high electrical fields. IEEE Proc. 20th Power Modulator Symposium, 1992. 316~319

    [3] Loubriel G M, Helgeson W D, McLaughlin D L, et al. Triggering GaAs lock-on switches with laser diode array. IEEE Trans. Electron Devices, 1991, 38 (4): 692~695

    [4] Kambour K, Kang S, Myles C W, et al. Steady-state properties of lock-on current filaments in GaAs. IEEE Trans Plasma Science, 2000, 28(5):1497~1499

    [5] Islam N E, Schamiloglu E, Fleddermann C B, et al. Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications. J Appl Phys, 1999, 86(5):1754~1758

    [7] Capps C D, Falk R A, Adams J C. Time dependent model of optically triggered GaAs switch. J Appl Phys, 1993, 74 (11): 6645~6654

    [8] Yee J H, Khanaka G H, Druce R L, et al. Modeling the effect of deep impurity ionization on GaAs photoconductive switches. SPIE, Optically Activated Switching II, 1992,1632: 21~31

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Effect of Deep Level Impurity on the Nonlinear Performances of Photoconductive Semiconductor Switches[J]. Acta Photonica Sinica, 2003, 32(1): 121
    Download Citation