• Chinese Physics B
  • Vol. 29, Issue 9, (2020)
Ji-Long Hao1、2, Yun Bai1、2、†, Xin-Yu Liu1、2, Cheng-Zhan Li3, Yi-Dan Tang1、2, Hong Chen1、2, Xiao-Li Tian1、2, Jiang Lu1、2, and Sheng-Kai Wang1、2
Author Affiliations
  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 00029, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou 412000, China
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    DOI: 10.1088/1674-1056/ab9434 Cite this Article
    Ji-Long Hao, Yun Bai, Xin-Yu Liu, Cheng-Zhan Li, Yi-Dan Tang, Hong Chen, Xiao-Li Tian, Jiang Lu, Sheng-Kai Wang. Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation[J]. Chinese Physics B, 2020, 29(9): Copy Citation Text show less
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    Ji-Long Hao, Yun Bai, Xin-Yu Liu, Cheng-Zhan Li, Yi-Dan Tang, Hong Chen, Xiao-Li Tian, Jiang Lu, Sheng-Kai Wang. Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation[J]. Chinese Physics B, 2020, 29(9):
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