• Chinese Journal of Lasers
  • Vol. 29, Issue 12, 1110 (2002)
[in Chinese]1、2, [in Chinese]1, [in Chinese]3, [in Chinese]2, and [in Chinese]3、*
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Field Electron Emission of Amorphous Boron Nitride Film[J]. Chinese Journal of Lasers, 2002, 29(12): 1110 Copy Citation Text show less

    Abstract

    Amorphous boron nitride thin film was prepared on the titanium coated ceramic substrate by pulsed laser deposition technique (PLD). The microstructure of the film was examined by using X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The electron field emission characteristics were investigated. The turn-on field was 4.6 V/μm. The current density was 50 μA/cm 2 at an electric field of 9 V/μm.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Field Electron Emission of Amorphous Boron Nitride Film[J]. Chinese Journal of Lasers, 2002, 29(12): 1110
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