• Acta Photonica Sinica
  • Vol. 36, Issue 5, 869 (2007)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect on Reflectance Spectra of Al0.5Ga0.5As/AlAs Distributed Bragg Reflector by Temperature[J]. Acta Photonica Sinica, 2007, 36(5): 869 Copy Citation Text show less
    References

    [1] SUGAWARA H,ITAYA K.High-Brightness InGaAlP green light-emitting diodes[J].Appl Phys Lett,1992,61 (15):1775-1777.

    [3] SAKA T,HIROTANI M,KATO T,et al.Bragg reflector of GaAlAs/AlAs layers with wide bandwidth applicable to light emitting diodes[J].J Appl Phys,1993,73(1):380-383.

    [4] SHEN J L,CHANG C Y.Temperature dependence of the reflectivity in absorbing Bragg reflectors[J].Optics Express,2001,9(6):287-293.

    [5] ADACHI H.AlAs and AlxGa1-xAs:material parameters for use in research and device applications[J].J Appl Phys,1985,58(3):R1-R29.

    [6] MACLEOD H A.Thin-film optical filters[M].NewYork:McGraw-Hill Publishing Company,1989:164-170.

    [7] GEHRSITZ S.The refractive index of AlxGa1-xAs below the band gap:Accurate determination and empirical modeling[J].J Appl Phys,2000,87 (11):7825-7837.

    [8] EUGENE H,NADARAJAH N.A method for projecting useful life of LED lighting systems[C].SPIE,5187:93-99.

    [9] CHHAJED S,XI Y,LI Y L,et al.Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes[J].J Appl Phys,2005,97:054506.1-054506.8.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect on Reflectance Spectra of Al0.5Ga0.5As/AlAs Distributed Bragg Reflector by Temperature[J]. Acta Photonica Sinica, 2007, 36(5): 869
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