• Chinese Journal of Lasers
  • Vol. 49, Issue 11, 1101002 (2022)
Nan Lin1、2, Li Zhong1、2、*, Haiming Li3, Xiaoyu Ma1、2, Cong Xiong1, Suping Liu1, and Zhigang Zhang4
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Guangdong Huakuai Photonics Technology Co., Ltd., Zhongshan 528436, Guangdong, China
  • 4School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
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    DOI: 10.3788/CJL202249.1101002 Cite this Article Set citation alerts
    Nan Lin, Li Zhong, Haiming Li, Xiaoyu Ma, Cong Xiong, Suping Liu, Zhigang Zhang. Strain-Compensated Multiquantum Well Structure Semiconductor Saturable Absorber Mirror[J]. Chinese Journal of Lasers, 2022, 49(11): 1101002 Copy Citation Text show less
    Schematic of two strain-compensated multiquantum well SESAMs structures
    Fig. 1. Schematic of two strain-compensated multiquantum well SESAMs structures
    PL spectra of samples A, B, C, E, and F
    Fig. 2. PL spectra of samples A, B, C, E, and F
    High resolution X-ray diffraction rocking curves on the lattice plane (004) of six samples. (a) Sample A; (b) sample B; (c) sample C; (d) sample D; (e) sample E; (f) sample F
    Fig. 3. High resolution X-ray diffraction rocking curves on the lattice plane (004) of six samples. (a) Sample A; (b) sample B; (c) sample C; (d) sample D; (e) sample E; (f) sample F
    Reflection spectra of test and simulation for sample D
    Fig. 4. Reflection spectra of test and simulation for sample D
    Reflection spectra of test and simulation for samples E and F. (a) Sample E; (b) sample F
    Fig. 5. Reflection spectra of test and simulation for samples E and F. (a) Sample E; (b) sample F
    Mode locking laser for testing the SESAM
    Fig. 6. Mode locking laser for testing the SESAM
    Results of mode locking test. (a) Curve of output power at different pump powers; (b) output optical spectrum; (c) output pulse width measured by autocorrelator; (d) oscilloscope trace with a mode-locked pulse train
    Fig. 7. Results of mode locking test. (a) Curve of output power at different pump powers; (b) output optical spectrum; (c) output pulse width measured by autocorrelator; (d) oscilloscope trace with a mode-locked pulse train
    SampleGaAs buffer thickness /nmNumber of DBR periodsNumber of MQW periodsGaAsP layer
    AsH3flow /(mL·min-1)PH3 flow /(mL·min-1)
    A200-1580500
    B200-3080500
    C200-3040500
    D20030---
    E200301580500
    F200303040500
    Table 1. Specific growth parameters of DBR, MQW, and SESAM
    SampleABCEF
    Peak wavelength /nm1079.01080.01078.11083.71095.0
    FWHM /nm25.554.842.029.758.4
    Table 2. PL spectrum peak wavelength and FWHM of samples A, B, C, E, and F
    SampleABCDEF
    Periodic thickness of MQW /nm20.220.120.2 19.719.8
    Periodic thickness of DBR /nm---166.7162.8163.5
    Table 3. Periodic thickness of MQW and DBR for samples AF
    Nan Lin, Li Zhong, Haiming Li, Xiaoyu Ma, Cong Xiong, Suping Liu, Zhigang Zhang. Strain-Compensated Multiquantum Well Structure Semiconductor Saturable Absorber Mirror[J]. Chinese Journal of Lasers, 2022, 49(11): 1101002
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