Author Affiliations
1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China3Guangdong Huakuai Photonics Technology Co., Ltd., Zhongshan 528436, Guangdong, China4School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, Chinashow less
Fig. 1. Schematic of two strain-compensated multiquantum well SESAMs structures
Fig. 2. PL spectra of samples A, B, C, E, and F
Fig. 3. High resolution X-ray diffraction rocking curves on the lattice plane (004) of six samples. (a) Sample A; (b) sample B; (c) sample C; (d) sample D; (e) sample E; (f) sample F
Fig. 4. Reflection spectra of test and simulation for sample D
Fig. 5. Reflection spectra of test and simulation for samples E and F. (a) Sample E; (b) sample F
Fig. 6. Mode locking laser for testing the SESAM
Fig. 7. Results of mode locking test. (a) Curve of output power at different pump powers; (b) output optical spectrum; (c) output pulse width measured by autocorrelator; (d) oscilloscope trace with a mode-locked pulse train
Sample | GaAs buffer thickness /nm | Number of DBR periods | Number of MQW periods | GaAsP layer |
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AsH3flow /(mL·min-1) | PH3 flow /(mL·min-1) |
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A | 200 | - | 15 | 80 | 500 | B | 200 | - | 30 | 80 | 500 | C | 200 | - | 30 | 40 | 500 | D | 200 | 30 | - | - | - | E | 200 | 30 | 15 | 80 | 500 | F | 200 | 30 | 30 | 40 | 500 |
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Table 1. Specific growth parameters of DBR, MQW, and SESAM
Sample | A | B | C | E | F |
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Peak wavelength /nm | 1079.0 | 1080.0 | 1078.1 | 1083.7 | 1095.0 | FWHM /nm | 25.5 | 54.8 | 42.0 | 29.7 | 58.4 |
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Table 2. PL spectrum peak wavelength and FWHM of samples A, B, C, E, and F
Sample | A | B | C | D | E | F |
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Periodic thickness of MQW /nm | 20.2 | 20.1 | 20.2 | | 19.7 | 19.8 | Periodic thickness of DBR /nm | - | - | - | 166.7 | 162.8 | 163.5 |
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Table 3. Periodic thickness of MQW and DBR for samples AF