• Journal of Synthetic Crystals
  • Vol. 49, Issue 11, 2200 (2020)
CHENG Hongjuan1,*, JIN Lei2, WU Honglei2, QI Haitao1..., WANG Zenghua1, SHI Yuezeng1 and ZHANG Li1|Show fewer author(s)
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    CHENG Hongjuan, JIN Lei, WU Honglei, QI Haitao, WANG Zenghua, SHI Yuezeng, ZHANG Li. Growth Behavior of AlN Single Crystal[J]. Journal of Synthetic Crystals, 2020, 49(11): 2200 Copy Citation Text show less
    References

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    [3] Pandey A, Shin W J, Gim J, et al. Highefficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet lightemitting diodes[J]. Photonics Res, 2020, 8: 311337.

    [4] Zheng W, Huang F, Zheng R S, Wu H L, lowdimensional structure vacuumultravioletsensitive (λ<200 nm) photodetector with fastresponse speed based on highquality AlN micro/nanowire[J]. Adv Mater, 2015, 27: 3921.

    [5] Yang F X, Jin L, Sun L J, et al. Freestanding twodimensional hexagonal aluminum nitride dielectric crystals for high performance organic fieldeffect transistors[J]. Adv Mater, 2018, 30: 1801891.

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    [11] Vibhu J, Fatemeh S S. Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN[J]. Journal of Applied Physics, 2009, 105: 084902.

    [12] Wang Z L, Kong X, Zuo J. Induced growth of asymmetric nanocantilever arrays on polar surfaces[J]. Physical Review Letters, 2003, 91(18): 185502.

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    CHENG Hongjuan, JIN Lei, WU Honglei, QI Haitao, WANG Zenghua, SHI Yuezeng, ZHANG Li. Growth Behavior of AlN Single Crystal[J]. Journal of Synthetic Crystals, 2020, 49(11): 2200
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