• Acta Physica Sinica
  • Vol. 68, Issue 20, 207302-1 (2019)
Heng Zhang1、2, Yan Huang1, Wang-Zhou Shi2, Xiao-Hao Zhou1、*, and Xiao-Shuang Chen1
Author Affiliations
  • 1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2School of Mathematics and Physics, Shanghai Normal University, Shanghai 200234, China
  • show less
    DOI: 10.7498/aps.68.20190783 Cite this Article
    Heng Zhang, Yan Huang, Wang-Zhou Shi, Xiao-Hao Zhou, Xiao-Shuang Chen. First-principles study on the diffusion dynamics of Al atoms on Si surface[J]. Acta Physica Sinica, 2019, 68(20): 207302-1 Copy Citation Text show less
    References

    [1] Bak S J, Mun D H, Jung K C, et al.[J]. Electron. Mater. Lett., 9, 367(2013).

    [2] Semond F[J]. MRS Bull., 40, 412(2015).

    [3] Liu X Y, Li H F, Uddin A, et al.[J]. J. Cryst. Growth, 300, 114(2007).

    [4] Cheng K, Leys M, Degroote S, et al.[J]. J. Electron. Mater., 35, 592(2006).

    [5] Yuan Y, Zuo R, Mao K, et al.[J]. Appl. Surf. Sci., 436, 50(2018).

    [6] Cordier Y, Comyn R, Frayssinet E, et al.[J]. Phys. Status Solidi A, 215, 1700637(2018).

    [7] Zhao D, Zhao D[J]. J. Semicond., 39, 033006(2018).

    [8] Wang X, Li H, Wang J, et al.[J]. Electron. Mater. Lett., 10, 1069(2014).

    [9] Liu B T, Ma P, Li X L, et al.[J]. Chin. Phys. Lett., 34, 058101(2017).

    [10] Novák T, Kostelník P, Konečný M, et al.[J]. Jpn. J. Appl. Phys., 5, SC1018(2019).

    [11] Lee S J, Jeon S R, Ju J W, et al.[J]. J. Nanosci. Nanotech., 19, 892(2019).

    [12] Cao M S, Shu J C, Wang X X, et al.[J]. Ann. Phys., 531, 1800390(2019).

    [13] Cao M S, Wang X X, Zhang M, et al.[J]. Adv. Funct. Mater., 29, 1807398(2019).

    [14] Zhang M, Wang X X, Cao W Q, et al.[J]. Adv. Opt. Mater., 1900689(2019).

    [15] Albao M A, Hsu C H, Putungan D B, et al.[J]. Surf. Sci., 604, 396(2010).

    [16] Luniakov Y V[J]. Surf. Sci., 605, 1866(2011).

    [17] Matsuo Y, Kangawa Y, Togashi R, et al.[J]. J. Cryst. Growth, 300, 66(2007).

    [18] Kresse G[J]. Phys. Rev. B, 47, 558(1993).

    [19] Kresse G, Furthmüller J[J]. Phys. Rev. B, 54, 11169(1996).

    [20] Stadler R, Podloucky R, Kresse G, et al.[J]. Phys. Rev. B, 57, 4088(1998).

    [21] Henkelman G, Jónsson H[J]. J. Chem. Phys., 113, 9978(2000).

    [22] Sheppard D, Terrell R, Henkelman G[J]. J. Chem. Phys., 128, 134106(2008).

    [23] Sheppard D, Henkelman G[J]. J. Comput. Chem., 32, 1769(2011).

    [24] Ly D Q, Paramonov L, Makatsoris C[J]. J. Phys.: Condens. Matter., 21, 185006(2009).

    [25] Kepenekian M, Robles R, Rurali R, et al.[J]. Nanotechnology, 25, 465703(2014).

    [26] Hsieh M F, Lin D S, Tsay S F[J]. Phys. Rev. B, 80, 045304(2009).

    Heng Zhang, Yan Huang, Wang-Zhou Shi, Xiao-Hao Zhou, Xiao-Shuang Chen. First-principles study on the diffusion dynamics of Al atoms on Si surface[J]. Acta Physica Sinica, 2019, 68(20): 207302-1
    Download Citation