• Semiconductor Optoelectronics
  • Vol. 45, Issue 1, 79 (2024)
XU Jian1, DENG Guangping2, PU Xi2, LIU Changju2, and ZHANG Jihua1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2023090801 Cite this Article
    XU Jian, DENG Guangping, PU Xi, LIU Changju, ZHANG Jihua. Intelligent LED Driver Circuit Based on Bipolar Technology for Optical Isolated IGBT Gate Driver[J]. Semiconductor Optoelectronics, 2024, 45(1): 79 Copy Citation Text show less
    References

    [3] Tavernier F, Steyaert M. High-speed optical receivers with integrated photodiode in 130nm CMOS[J]. IEEE J. Solid-State Circuits, 2009, 44(10): 2856-2867.

    [4] Ramezani M, Salama C A T. A monolithic IGBT gate driver implemented in a conventional 0.8/spl mu/m BiCMOS process[C]// Proc. of the 10th International Symp. on Power Semiconductor Devices and ICs, 1998: 109-112.

    [6] Wang Z, Shi X, Tolbert L M, et al. A di/dt feedback-based active gate driver for smart switching and fast overcurrent protection of IGBT modules[J]. IEEE Trans. on Power Electronics, 2014, 29(7): 3720-3732.

    XU Jian, DENG Guangping, PU Xi, LIU Changju, ZHANG Jihua. Intelligent LED Driver Circuit Based on Bipolar Technology for Optical Isolated IGBT Gate Driver[J]. Semiconductor Optoelectronics, 2024, 45(1): 79
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