Utilizing the sintering method with shielding gas, a double semiconductor underlayer carbon nanotube (DSU-CNT) film cathode was fabricated, where stripe silver electrode was formed with the sintered silver slurry, while ZnO and TiO2 blending underlayers of the same width were parallel-arranged over stripe silver electrode surface, with the CNT film layer being prepared over the above underlayers. Due to better protection from oxidation by the shielding gas, no CNTs in CNT film layer were damaged, and ZnO and TiO2 particles were also shielded in the sintering process. Thus, improved electron emission characteristics of DSU-CNT film cathode were achieved, and the electron emission stability was also efficiently enhanced. As compared to the common stripe silver electrode CNT cathode, the turn-on electric field of DSU-CNT film cathode could be reduced from 2.09 V/μm to 1.91 V/μm, the maximum electron emission current could be increased from 1 653.5 μA to 2 672.9 μA. With the same electric field of 2.69 V/μm, the emission current of common stripe silver electrode CNT electrode was only 421.1 μA, while that of DSU-CNT film cathode could reach 723.5 μA. Seen from the experimental curves of emission current stability, the stable electron emission for DSU-CNT film cathode was realized, which proved that ZnO and TiO2 blending underlayers could be used in the vacuum environment. A satisfactory emission image was obtained, which indicated that the fabrication of DSU-CNT film cathode was feasible and the proposed DSU-CNT film cathode was a suitable electron emission cathode.