Wenqiang Song, Fei Hou, Feibo Du, Zhiwei Liu, Juin J. Liou. Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications[J]. Chinese Physics B, 2020, 29(9):
- Chinese Physics B
- Vol. 29, Issue 9, (2020)
Fig. 1. Cross-sectional views of (a) conventional MLSCR and (b) the proposed EGDTSCR.
Fig. 2. The current density distributions of EGDTSCR under a 2A-TLP stress at (a) the triggering of the reverse gated diode D1, (b) the triggering of parasitic NPN, and (c) the triggering of SCR path.
Fig. 3. TCAD simulated current density distributions of the MLSCR after triggering under a 2A-TLP stress.
Fig. 4. Measured TLP I –V curves and leakage currents of the proposed EGDTSCR and MLSCR.
Fig. 5. The impact ionization of EGDTSCR after the triggering of SCR path.
Fig. 6. TLP I –V curves and leakage currents of proposed EGDTSCR with three different L 4.
Fig. 7. TLP I –V curves and leakage currents of the proposed EGDTSCR with three different L 6.
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Table 1. Key ESD parameters of MLSCR and proposed EGDTSCR with three different L6.
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