Measurement of semiconductor bridge plasma temperature using spectroscopic method

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Journals >Journal of Atomic and Molecular Physics >Volume 25 >Issue 2 >Page 313 > Article

Journal of Atomic and Molecular Physics
Vol. 25, Issue 2, 313 (2008)

Measurement of semiconductor bridge plasma temperature using spectroscopic method

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measurement of semiconductor bridge plasma temperature using spectroscopic method[J]. Journal of Atomic and Molecular Physics, 2008, 25(2): 313 Copy Citation Text

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References

[4] Jongdae Kim,Tae Moon Roh,Kyoung-Ik Cho,et al.Optical characteristics of silicon semiconductor bridges under high current density conditions[J].IEEE Transactions on Electron Devices,2001,48 (5):852

[5] Jong-Uk Kim,Chong-Ook Park,Myung-Ⅱ Park,et al.Characteristics of semiconductor bridge (SCB) plasma generated in a micro-electro-mechanical system (MEMS)[J].Phys.Lett.A,2002,305:413

[6] Reif J,Fassel V A,Kniseley R U.Spectroscopic flame temperature measurements and their physical significance-I:theoretical concepts-A critical review[J].Spectrochim.Acta,1973,28:105

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