• Chinese Journal of Lasers
  • Vol. 51, Issue 8, 0801003 (2024)
Zhongbiao Chen, Bifeng Cui*, Xiangrui Zheng, Chunpeng Yang, Bozhao Yan, Qing Wang, and Xinyu Gao
Author Affiliations
  • Key Laboratory of Opto-Electronics Technology of Ministry of Education, Faculty of Information Technology,Beijing University of Technology, Beijing 100124, China
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    DOI: 10.3788/CJL231351 Cite this Article Set citation alerts
    Zhongbiao Chen, Bifeng Cui, Xiangrui Zheng, Chunpeng Yang, Bozhao Yan, Qing Wang, Xinyu Gao. Optimization of Oxidation for Vertical Cavity Surface Emitting Semiconductor Lasers[J]. Chinese Journal of Lasers, 2024, 51(8): 0801003 Copy Citation Text show less
    Schematic of VCSEL epitaxial structure
    Fig. 1. Schematic of VCSEL epitaxial structure
    Production process of oxide aperture for VCSEL based on (NH4)2S wet passivation
    Fig. 2. Production process of oxide aperture for VCSEL based on (NH4)2S wet passivation
    SEM pictures of sample sidewalls under different oxidation process conditions. (a) Sample 1,traditional oxidation; (b) sample 2, oxidation after passivation
    Fig. 3. SEM pictures of sample sidewalls under different oxidation process conditions. (a) Sample 1,traditional oxidation; (b) sample 2, oxidation after passivation
    Micrographs of sample oxide apertures
    Fig. 4. Micrographs of sample oxide apertures
    Oxidation depth versus time
    Fig. 5. Oxidation depth versus time
    P-I-V test curves of 940 nm VCSEL with oxide aperture size of 5 μm at room temperature (25 ℃)
    Fig. 6. P-I-V test curves of 940 nm VCSEL with oxide aperture size of 5 μm at room temperature (25 ℃)
    Measured spectra of VCSEL at room temperature (25 ℃). (a) Comparison of spectra of VCSEL under two process conditions when driving current is 1 mA; (b) spectrum of VCSEL before passivation whencurrent is 8Ith; (c) spectrum of VCSEL after passivation whencurrent is 8Ith
    Fig. 7. Measured spectra of VCSEL at room temperature (25 ℃). (a) Comparison of spectra of VCSEL under two process conditions when driving current is 1 mA; (b) spectrum of VCSEL before passivation whencurrent is 8Ith; (c) spectrum of VCSEL after passivation whencurrent is 8Ith
    Zhongbiao Chen, Bifeng Cui, Xiangrui Zheng, Chunpeng Yang, Bozhao Yan, Qing Wang, Xinyu Gao. Optimization of Oxidation for Vertical Cavity Surface Emitting Semiconductor Lasers[J]. Chinese Journal of Lasers, 2024, 51(8): 0801003
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