• Chinese Optics Letters
  • Vol. 2, Issue 4, 04226 (2004)
Baoxia Li*, Xiaohua Hu, Hongliang Zhu, Baojun Wang..., Lingjuan Zhao and Wei Wang|Show fewer author(s)
Author Affiliations
  • National Center of Optoelectronics Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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    Baoxia Li, Xiaohua Hu, Hongliang Zhu, Baojun Wang, Lingjuan Zhao, Wei Wang, "Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method," Chin. Opt. Lett. 2, 04226 (2004) Copy Citation Text show less

    Abstract

    An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.
    Baoxia Li, Xiaohua Hu, Hongliang Zhu, Baojun Wang, Lingjuan Zhao, Wei Wang, "Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method," Chin. Opt. Lett. 2, 04226 (2004)
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