Author Affiliations
1Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China2Zhejiang Key Laboratory of Photoelectric Detection Materials and Devices, Ningbo University, Ningbo 315211, China3Advanced Technology Research Institute, Ningbo University, Ningbo 315211, Chinashow less
Fig. 1. Schematic of the structure of a thin film coated on a transparent silica glass substrate.
Fig. 2. Transmittance curve of Si-H thin film on finite glass substrate.
Fig. 3. Comparison of refractive index and dispersion of thin film obtained by six different models.
Fig. 4. Relation between the refractive index and the dispersion obtained by six dispersion models (include MCM) and the true value as a function of wavelength: (a) Δnvs. wavelength; (b) ΔDvs. wavelength.
Fig. 5. Comparison of five filtering methods to reduce noise: (a) Adjacent averaging method; (b) Savitaky-Golay method; (c) percentile filter method; (d) FFT filter method; (e) piecewise fitting method.
Fig. 6. Transmission curve with upper and lower tangent envelopes obtained by using the improved Swanepoel method: (a) Ge20Sb15Se65 film; (b) Ge28Sb12Se60 film.
Fig. 7. Refractive index and dispersion of Ge-Sb-Se films: (a) Refractive index vs. wavelength; (b) dispersion vs. wavelength.
Fig. 8. Absorption characteristics of Ge-Sb-Se films: (a) Absorption coefficient vs. wavelength; (b) square root of the product of the absorption coefficient and photon energy vs. the photon energy in the strong absorption region.
Fig. 9. Raman spectrum of Ge-Sb-Se film.
名称 | 模型 | Cauchy | $n = A + \dfrac{B}{{{\lambda ^2}}} + \dfrac{C}{{{\lambda ^4}}}$![]() ![]() | 二阶归一化标准Sellmeier | $n = \sqrt {1 + \dfrac{{A \cdot {\lambda ^2}}}{{{\lambda ^2} - B}} + \dfrac{{C \cdot {\lambda ^2}}}{{{\lambda ^2} - D}}} $![]() ![]() | 三阶归一化标准Sellmeier | $n = \sqrt {1 + \dfrac{{A \cdot {\lambda ^2}}}{{{\lambda ^2} - B}} + \dfrac{{C \cdot {\lambda ^2}}}{{{\lambda ^2} - D}} + \dfrac{{E \cdot {\lambda ^2}}}{{{\lambda ^2} - F}}} $![]() ![]() | 二阶非标准形式的Sellmeier | $n = \sqrt {A + \dfrac{{B \cdot {\lambda ^2}}}{{{\lambda ^2} - C}} + D \cdot {\lambda ^2}} $![]() ![]() | Conrady | $n = A + \dfrac{B}{\lambda } + \dfrac{C}{{{\lambda ^{3.5}}}}$![]() ![]() | Herzberger | $n = A + B \cdot {\lambda ^2} + C \cdot {\lambda ^2} + \dfrac{D}{{\left( {{\lambda ^2} - 0.028} \right)}} + \dfrac{E}{{{{\left( {{\lambda ^2} - 0.028} \right)}^2}}}$![]() ![]() |
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Table 1. [in Chinese]
λ | TM | Tm | n | d | m0 | m | n0 | d0 | 972.4 | 0.9202 | 0.5007 | 2.9173 | | 6.001 | 6.0 | 2.9169 | 1000.0 | 911.2 | 0.9199 | 0.4904 | 2.9613 | | 6.501 | 6.5 | 2.9611 | 1000.0 | 859.0 | 0.9193 | 0.4801 | 3.0066 | 1000.0 | 7.002 | 7.0 | 3.0062 | 1000.0 | 814.1 | 0.9183 | 0.4697 | 3.0527 | 1000.4 | 7.501 | 7.5 | 3.0526 | 1000.1 | 774.9 | 0.9165 | 0.4591 | 3.0996 | 1000.1 | 8.002 | 8.0 | 3.0993 | 1000.0 | 740.5 | 0.9134 | 0.4485 | 3.1471 | 999.5 | 8.502 | 8.5 | 3.1468 | 1000.0 | 710.0 | 0.9080 | 0.4376 | 3.1951 | 999.7 | 9.002 | 9.0 | 3.1947 | 1000.0 | 682.8 | 0.8984 | 0.4260 | 3.2435 | 999.4 | 9.502 | 9.5 | 3.2430 | 999.9 | 658.4 | 0.8818 | 0.4132 | 3.2921 | 1000.2 | 10.002 | 10.0 | 3.2917 | 1000.0 | 636.3 | 0.8530 | 0.3982 | 3.3410 | 999.3 | 10.503 | 10.5 | 3.3402 | 999.9 | 616.3 | 0.8050 | 0.3796 | 3.3898 | 999.6 | 11.003 | 11.0 | 3.3893 | 999.9 | 598.1 | 0.7252 | 0.3546 | 3.4335 | 1020.4 | 11.483 | 11.5 | 3.4387 | 1001.6 | 581.3 | 0.6127 | 0.3191 | 3.4878 | 1000.6 | 12.002 | 12.0 | 3.4874 | 1000.0 | 565.9 | 0.4595 | 0.2678 | 3.5368 | 981.9 | 12.502 | 12.5 | 3.5365 | 1000.0 | 551.7 | 0.2879 | 0.1965 | 3.5856 | 1001.6 | 13.001 | 13.0 | 3.5857 | 1000.1 | 注:
$ \qquad \quad \overline d = 1000.2;{\sigma _1} = 7.58;\overline {{d_0}} = 1000.1;{\sigma _0} = 0.40$![]() .
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Table 2. Values of λ, TM, and Tm obtained in Fig. 2 and the values of n and d calculated by the improved Swanepoel method
由图2中数据获得的λ, TM和Tm的值以及通过改进后的Swanepoel方法计算的n和d值
波长/nm | Ge20Sb15Se65薄膜
| | Ge28Sb12Se60薄膜
| Texp | TM | m | n | | Texp | TM | m | n | 600 | 0.2449 | 0.2682 | 8.7331 | 2.6902 | | 0.0009 | 0.0253 | 13.3793 | 2.8670 | 620 | 0.3463 | 0.4036 | 8.0131 | 2.6530 | | 0.0417 | 0.0726 | 12.7620 | 2.8259 | 640 | 0.4987 | 0.5496 | 7.4160 | 2.6208 | | 0.1107 | 0.0957 | 12.2073 | 2.7902 | 660 | 0.4749 | 0.6845 | 6.9106 | 2.5929 | | 0.2449 | 0.2519 | 11.7057 | 2.7592 | 680 | 0.7724 | 0.7891 | 6.4760 | 2.5685 | | 0.2914 | 0.3957 | 11.2495 | 2.7320 | 700 | 0.6566 | 0.8552 | 6.0972 | 2.5472 | | 0.5222 | 0.5266 | 11.0259 | 2.7081 | 750 | 0.9088 | 0.9096 | 5.7634 | 2.5041 | | 0.7469 | 0.7853 | 10.1068 | 2.6597 | 800 | 0.6160 | 0.9219 | 5.4665 | 2.4720 | | 0.6155 | 0.9123 | 9.3455 | 2.6233 | 900 | 0.6199 | 0.9321 | 4.9602 | 2.4285 | | 0.8667 | 0.9681 | 8.1494 | 2.5735 | 1000 | 0.7666 | 0.9388 | 4.5433 | 2.4014 | | 0.7547 | 0.9735 | 7.2448 | 2.5420 | 1100 | 0.8085 | 0.9429 | 4.1932 | 2.3835 | | 0.6124 | 0.9773 | 6.5316 | 2.5210 | 1200 | 0.7580 | 0.9455 | 3.8945 | 2.3711 | | 0.9678 | 0.9805 | 5.9523 | 2.5062 | 1300 | 0.6850 | 0.9472 | 3.6364 | 2.3622 | | 0.6186 | 0.9813 | 5.4709 | 2.4955 | 1400 | 0.9418 | 0.9480 | 3.4109 | 2.3556 | | 0.9556 | 0.9806 | 5.0638 | 2.4875 | 1500 | 0.7814 | 0.9482 | 3.2121 | 2.3506 | | 0.7282 | 0.9801 | 4.7145 | 2.4813 | 1600 | 0.6521 | 0.9479 | 3.0356 | 2.3466 | | 0.6430 | 0.9800 | 4.4112 | 2.4765 | 1700 | 0.7244 | 0.9474 | 2.8776 | 2.3435 | | 0.8853 | 0.9800 | 4.1452 | 2.4726 | 1800 | 0.8914 | 0.9470 | 3.1213 | 2.3410 | | 0.9383 | 0.9801 | 3.9099 | 2.4694 | 1900 | 0.9384 | 0.9470 | 2.9544 | 2.3389 | | 0.7164 | 0.9801 | 3.7002 | 2.4668 | 2000 | 0.8249 | 0.9476 | 2.8046 | 2.3372 | | 0.6282 | 0.9800 | 3.5121 | 2.4647 | 2100 | 0.7121 | 0.9491 | 2.6694 | 2.3358 | | 0.6868 | 0.9800 | 3.2838 | 2.4628 | 2200 | 0.6614 | 0.9518 | 2.5468 | 2.3345 | | 0.8411 | 0.9801 | 3.1325 | 2.4613 | 2300 | 0.6679 | 0.9559 | 2.4349 | 2.3335 | | 0.9705 | 0.9804 | 2.9947 | 2.4599 | 2400 | 0.7188 | 0.9617 | 2.3326 | 2.3326 | | 0.9441 | 0.9809 | 2.8686 | 2.4588 |
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Table 3. Refractive index at multiple wavelengths of two thin films obtained by MCM.
多点柯西法获得的两种薄膜多个波长处的折射率
拉曼峰位/cm–1 | 振动模式 | 160 | Se2Sb-SbSe2结构中的Sb—Sb同极键的振动
| 170 | Ge2Se6/2结构中的Ge—Ge同极键的伸缩振动
| 197 | SbSe3/2三角锥结构中的Sb—Se键的E1模式振动
| 203 | 共顶角GeSe4/2四面体中的Ge—Se键的V1模式振动
| 215 | 共边GeSe4/2四面体中的Ge—Se键振动
| 235 | Sen环结构中的Se—Se键振动
| 256 | Sen链结构中的Se—Se键振动
| 270 | Ge-GemSe4-m结构中的Ge—Ge同极键的振动
| 303 | GeSe4四面体的F2型不对称振动
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Table 4. Vibration modes in the Raman spectrum of Ge-Sb-Se system.
Ge-Sb-Se薄膜拉曼光谱中对应的振动模式