Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition

Chen Fang; Fang Xuan; Wang Shuangpeng; Niu Shouzhu; Fang Fang; Fang Dan; Tang Jilong; Wang Xiaohua; Liu Guojun; Wei Zhipeng

doi:10.3788/irla201645.0421001

Journals >Infrared and Laser Engineering >Volume 45 >Issue 4 >Page 421001 > Article

Infrared and Laser Engineering
Vol. 45, Issue 4, 421001 (2016)

Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition

Chen Fang^1、*, Fang Xuan¹, Wang Shuangpeng², Niu Shouzhu¹, Fang Fang³, Fang Dan¹, Tang Jilong¹, Wang Xiaohua¹, Liu Guojun¹, and Wei Zhipeng¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: 10.3788/irla201645.0421001 Cite this Article

Chen Fang, Fang Xuan, Wang Shuangpeng, Niu Shouzhu, Fang Fang, Fang Dan, Tang Jilong, Wang Xiaohua, Liu Guojun, Wei Zhipeng. Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition[J]. Infrared and Laser Engineering, 2016, 45(4): 421001 Copy Citation Text

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Abstract

The influence of growth temperature on the properties of aluminum nitride(AlN) films are grown by plasma enhanced atomic layer deposition(PEALD) at different deposition temperature. NH3 and trimethylaluminum(TMA) were used as precursors, 200, 500, 800, 1 000, 1 500 cycles AlN layers were deposited at 300 ℃, 350 ℃ and 370 ℃, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370 ℃.

Keywords

Aluminum nitride crystallization deposition temperature growth rate plasma enhanced atomic layer deposition surface roughness

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