• Acta Photonica Sinica
  • Vol. 39, Issue 5, 792 (2010)
ZHENG Yu1、2, WANG Jing-quan1, LI Ming1, NIU Xiao-yun1, and DU Jing-lei1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    ZHENG Yu, WANG Jing-quan, LI Ming, NIU Xiao-yun, DU Jing-lei. Resist Exposure Developing Simulation Study of SPPs Lithography[J]. Acta Photonica Sinica, 2010, 39(5): 792 Copy Citation Text show less

    Abstract

    Based on the models of thin-layer resist exposure and developing,the SPPs resist exposure model is established.Two kinds of resist of AZ1500 and AR3170 are chosen to simulate the process of exposure and developing,and the final profile of SPPs lithography is obtained.Some craft optimization conditions are also conclucled.The research results are for experiment and future work of SPPs lithography.
    ZHENG Yu, WANG Jing-quan, LI Ming, NIU Xiao-yun, DU Jing-lei. Resist Exposure Developing Simulation Study of SPPs Lithography[J]. Acta Photonica Sinica, 2010, 39(5): 792
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