Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes

Xiangdong SHI; Xiaoyan LAI

Journals >Infrared Technology >Volume 43 >Issue 1 >Page 56 > Article

Infrared Technology
Vol. 43, Issue 1, 56 (2021)

Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes

Xiangdong SHI^* and Xiaoyan LAI

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[in Chinese]

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DOI: Cite this Article

SHI Xiangdong, LAI Xiaoyan. Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes[J]. Infrared Technology, 2021, 43(1): 56 Copy Citation Text

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References

[4] Haitz R H. Model for the electrical behavior of microplasma[J]. Journal of Applied Physics, 1964, 35(5): 1370-1376.

[5] Haitz R H. Mechanisms contributing to the noise pulse rate of avalanche diodes[J]. Journal of Applied Physics, 1965, 36(10): 3123-3131.

[6] Cova S, Longoni A, Andreoni A. Towards picoseconds resolution with single-photon avalanche diodes[J]. Review of Scientific Instruments, 1981,52(3): 408-412.

[7] R H Haitz. Model for the electrical behavior of microplasma[J]. Journal of Applied Physics, 1964, 35(5): 1370-1376.

[8] Tisa S, Zappa F, Tosi A, et al. Electronics for single photon avalanche diode arrays[J]. Sensors and Actuators, 2007, 140(1): 113-122.

SHI Xiangdong, LAI Xiaoyan. Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes[J]. Infrared Technology, 2021, 43(1): 56

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