• Chinese Optics Letters
  • Vol. 6, Issue 1, 0171 (2008)
Lin Li, Guojun Liu, Zhanguo Li, Mei Li, and Xiaohua Wang
Author Affiliations
  • National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
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    Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang. Growth and characterization of InAs quantum dots with low-density and long emission wavelength[J]. Chinese Optics Letters, 2008, 6(1): 0171 Copy Citation Text show less
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    CLP Journals

    [1] Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang. Extremely low density self-assembled InAs/GaAs quantum dots[J]. Chinese Optics Letters, 2008, 6(6): 443

    [2] Yao Jianming, Kong Lingmin, Tu Hua, Wu Zhengyun. Photoluminescence Characteristics of Self-Assembled InAs Quantum Dots Capped with Different Strain Reducing Layer[J]. Acta Optica Sinica, 2009, 29(s1): 156

    [3] Li Zhanguo, Liu Guojun, You Minghui, Li Lin, Li Hui, Feng Ming, Li Mei, Gao Xin, Li Lianhe. Investigation of Ga-Assisted Desorption of Native Surface Oxide on GaAs Substrate[J]. Acta Optica Sinica, 2011, 31(10): 1016003

    [4] Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, Yi Qu, Baoxue Bo. Optical properties of 1.3-\mum InAs/GaAs quantum dots grown by metal organic chemical vapor deposition[J]. Chinese Optics Letters, 2009, 7(8): 08741

    Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang. Growth and characterization of InAs quantum dots with low-density and long emission wavelength[J]. Chinese Optics Letters, 2008, 6(1): 0171
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