Materials of InGaAs/AlGaAs separate confinement heterostructure strained single quantum well were grown by the technology of metal organic chemical vapor deposition (MOCVD). The 1 D semiconductor laser linear arrays were made using this materials,then they were assembled to form 2 D array. It′s peak wavelength is 903 nm, the full width at half maximum (FWHM) is 4 4 nm, the peak output power is 730 W (pulse width 1000 μs, drive current 77 A), and the density of output power is 487 W/cm 2. The laser can work very reliably over 8600 hours in this condition.