The micro Raman scanning test was carried out on InSb wafer before and after heat treatment. A new characterization method of stress surface distribution of InSb wafer was developed. The transverse optical (TO) phonon scattering peaks of InSb before and after heat treatment are 179.3 cm-1 and 178.5 cm-1, respectively. The longitudinal optical (LO) phonon scattering peaks of are 188.8 cm-1 and 188.7 cm-1, respectively. The half-peak widths of characteristic peaks are 5.8 cm-1 and 5.0 cm-1, respectively. The half-peak widths of X-ray dual-crystal diffraction curves are 12.10--20.04 arcsec and 7.61--7.74 arcsec, respectively. For devices made of heat-treated InSb wafers, the increment of blind element is less after baking at 80℃ for 20 days, and the overall quantity is small. This indicates that the heat treatment releases the residual stress of the wafer, which has a favorable effect on the new blind pixel in the late suppression device, and lays a material foundation for the preparation of a new generation of infrared detector with ultra-high performance and ultra-large size.